Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers

Applied Physics Letters

Volumn 81, Issue 23, 2002, Pages 4389-4391

  Xu, S J ^a   Zheng, L X ^a   Cheung, S H ^a   Xie, M H ^a   Tong, S Y ^a,c   Yang, Hui ^b  

^a The University of Hong Kong   (Hong Kong)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; PHONONS; SEMICONDUCTOR DOPING; THIN FILMS; ZINC COMPOUNDS;

EPILAYERS;

LUMINESCENCE;

EID: 0037011471     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1526450     Document Type: Article

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