Thermal behavior analysis of GaN based epi-material on different substrates by means of a physical-thermal model

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 8, 2010, Pages 1820-1826

  Tang, Xiao ^a   Rousseau, Michel ^a   Defrance, Nicolas ^a   Hoel, Virginie ^a   Soltani, Ali ^a   Langer, Robert ^b   De Jaeger, Jean Claude ^a  

^a UNIV LILLE   (France)

^b Picogiga International   (France)

Author keywords

Epitaxy; III V semiconductors; Thermal simulations

Indexed keywords

A-THERMAL; ALGAN/GAN; ANDERSONS; COMPOSITE SUBSTRATE; DIFFERENT SUBSTRATES; EPITAXY; HIGH DISSIPATED POWER; II-IV SEMICONDUCTORS; LATTICE TEMPERATURES; MICROWAVE POWER DEVICE; POLYCRYSTALLINE DIAMONDS; POWER DISSIPATION; SELF-HEATING EFFECT; SI SUBSTRATES; SIMULATION RESULT; THERMAL BEHAVIORS; THERMAL MODEL; THERMAL PERFORMANCE; THERMAL PHENOMENA; THERMAL RESISTANCE; THERMAL SIMULATIONS;

EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HEAT RESISTANCE; SILICON CARBIDE;

SUBSTRATES;

EID: 77957968422     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925321     Document Type: Article

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