Temperature measurement in AlGaN/GaN high-electron-mobility transistors using micro-Raman scattering spectroscopy

EPJ Applied Physics

Volumn 30, Issue 2, 2005, Pages 77-82

  Aubry, R ^a   Dua, C ^a   Jacquet, J C ^a   Lemaire, F ^a   Galtier, P ^a   Dessertenne, B ^a   Cordier, Y ^b   DiForte Poisson, M A ^a   Delage, S L ^a  

^a Thaies Research and Technology France   (France)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE CIRCUITS; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; SILICON CARBIDE; THERMAL CONDUCTIVITY;

HETEROGENEOUS SUBSTRATES; MICRO RAMAN SCATTERING SPECTROSCOPY; MICRO-RAMAN SCATTERING; WIDE BANDGAP SEMICONDUCTORS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 18444418523     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2005025     Document Type: Article

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