Accurate dependence of gallium nitride thermal conductivity on dislocation density

Applied Physics Letters

Volumn 89, Issue 9, 2006, Pages

  Mion, C ^a   Muth, J F ^a   Preble, E A ^b   Hanser, D ^b  

^a North Carolina State University   (United States)

^b Kyma Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITY; HYDRIDE VAPOR PHASE EPITAXY; LOGARITHMIC DEPENDENCE; SEMI-INSULATING GALLIUM NITRIDE;

DISLOCATIONS (CRYSTALS); HYDRIDES; THERMAL CONDUCTIVITY; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 33748285022     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335972     Document Type: Article

References (24)

1. A. M. Darwish, A. J. Bayba, and H. A. Hung, IEEE Trans. Microwave Theory Tech. 52, 2611 (2004).
2. S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode: The Complete Story (Springer, Berlin, 2000).
3. D. I. Florescu, V. M. Asnin, F. H. Pollak, R. J. Molnar, and C. E. C. Wood, J. Appl. Phys. 88, 3295 (2000).
4. G. A. Slack, L. J. Schowalter, D. Morellic, and J. A. Freitas, Jr., J. Cryst. Growth 246, 287 (2002).
5. A. Jezowski, B. A. Danilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, and T. Paszkiewicz, Solid State Commun. 128, 69 (2003).
6. D. I. Florescu, V. M. Asnin, F. H. Pollak, A. M. Jones, J. C. Ramer, M. J. Schurman, and I. Ferguson, Appl. Phys. Lett. 77, 1464 (2000).
7. J. Zou, D. Kotchetkov, A. A. Balandin, D. I. Florescu, and F. H. Pollak, J. Appl. Phys. 92, 2534 (2002).
8. W. Liu, A. A. Balandin, C. Lee, and H. Lee, Phys. Status Solidi A 179, R135 (2005).
9. D. I. Florescu, F. H. Pollak, T. Paskova, E. Valcheva, and B. Monemar, Compound Semicond. 7, 62 (2001).
10. C. Mion, J. F. Muth, E. A. Preble, and D. Hanser, Mater. Res. Soc. Symp. Proc. 892, FF29.5 (2006).
11. M. Kamano, M. Haraguchi, T. Niwaki, M. Fukui, M. Kuwahara, T. Okamoto, and T. Mukai, Jpn. J. Appl. Phys., Part 1 41, 5034 (2002).
12. C. Luo, D. R. Clarke, and J. R. Dryden, J. Electron. Mater. 30, 138 (2001).
13. E. K. Sichel and J. I. Pankove, J. Phys. Chem. Solids 38, 330 (1977).
14. R. P. Vaudo, G. R. Brandes, J. S. Flynn, X. Xu, M. F. Chriss, C. S. Christos, D. M. Keogh, and F. D. Tamweber, IPAP Conference Series 1, Proceedings of the International Workshop on Nitride Semiconductors (The Institute of Pure and Applied Physics, Nagoya, Japan, 2000), p. 15.
15. W. L. Liu and A. A. Balandin, J. Appl. Phys. 97, 073710 (2005).
16. C. M. Bhandari and D. M. Rowe, Thermal Conduction in Semiconductors (Wiley, New York, 1988).
17. D. G. Cahill, Rev. Sci. Instrum. 61, 802 (1990).
18. T. Borca-Tasciuc, A. R. Kumar, and G. Chen, Rev. Sci. Instrum. 72, 2139 (2001).
19. J. H. Kim, A. Feldman, and D. Novotny, J. Appl. Phys. 86, 3959 (1999).
20. G. A. Slack, Solid State Phys. 34, 1 (1979).
21. S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, and J. S. Speck, Phys. Status Solidi A 179, 125 (2000).
22. H. Morkoc, Mater. Sci. Eng., R. 33, 135 (2001).
23. P. G. Klemens, Proc. Phys. Soc., London, Sect. A 68A, 1113 (1955).
24. R. Berman, Thermal Conduction in Solids (Clarendon, Oxford, 1976), 71.