SCOPUS 정보 검색 플랫폼

Volumn 44, Issue 3, 2008, Pages 238-239

First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate

(10) Hoel, V a Defrance, N a De Jaeger, J C a Gerard, H a Gaquiere, C a Lahreche, H b Langer, R b Wilk, A b Lijadi, M b Delage, S c

a INSTITUT D ELECTRONIQUE (France)

b Picogiga International (France)

c III V Lab (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITE STRUCTURES; MICROWAVE POWER TRANSMISSION; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SINGLE CRYSTALS;

COMPOSITE DEVICES; SINGLE CRYSTAL LAYERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 38849105060 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20083258 Document Type: Article

Times cited : (10)

References (5)

1
- 33645524589
- Output power density of 5.1W/mm at 18GHz with an AlGaN/GaN HEMT on Si substrate
- 10.1109/LED.2005.860385 0741-3106
- Ducatteau, D., Minko, A., Hoel, V., Morvan, E., Delos, E., Grimbert, B., Lahreche, H., Bove, P., Gaquiere, C., and De Jaeger, J.C.: ' Output power density of 5.1W/mm at 18GHz with an AlGaN/GaN HEMT on Si substrate ', IEEE Electron Device Lett., 2006, 27, (1), p. 7-9 10.1109/LED.2005.860385 0741-3106
- (2006) IEEE Electron Device Lett. , vol.27 , Issue.1 , pp. 7-9
- Ducatteau, D.¹ Minko, A.² Hoel, V.³ Morvan, E.⁴ Delos, E.⁵ Grimbert, B.⁶ Lahreche, H.⁷ Bove, P.⁸ Gaquiere, C.⁹ De Jaeger, J.C.¹⁰

2
- 4043147269
- AlGaN/GaN HEMTs on Si substrate with 7W/mm output power density at 10GHz
- 10.1049/el:20045292 0013-5194
- Dumka, D.C., Lee, C., Tserng, H.Q., Saunier, P., and Kumar, M.: ' AlGaN/GaN HEMTs on Si substrate with 7W/mm output power density at 10GHz ', Electron. Lett., 2004, 40, (16), p. 1023-1024 10.1049/el:20045292 0013-5194
- (2004) Electron. Lett. , vol.40 , Issue.16 , pp. 1023-1024
- Dumka, D.C.¹ Lee, C.² Tserng, H.Q.³ Saunier, P.⁴ Kumar, M.⁵

3
- 33847196118
- Progress in microwave GaN HEMT grown by MBE on silicon and smart cut/spl trade/engineered substrates for high power applications
- Paris, France
- Lahreche, H., Fore, B., Richtarch, C., Letertre, F., Langer, R., and Bove, P.: ' Progress in microwave GaN HEMT grown by MBE on silicon and smart cut/spl trade/engineered substrates for high power applications ', GAAS Conf., Paris, France, 2005, p. 369-371
- (2005) GAAS Conf. , pp. 369-371
- Lahreche, H.¹ Fore, B.² Richtarch, C.³ Letertre, F.⁴ Langer, R.⁵ Bove, P.⁶

4
- 50249142915
- Recent achievement in the AlGaN/GaN HEMT epitaxy on silicon and engineering substrates exhibiting improved performances
- Venice, Italy
- Lahreche, H., Wilk, A., Bove, P., Lijadi, M., Langer, R., Thuret, J., De Jaeger, J.C., Hoel, V., and Delage, S.: ' Recent achievement in the AlGaN/GaN HEMT epitaxy on silicon and engineering substrates exhibiting improved performances ', WOCSDICE Conf., Venice, Italy, 2007
- (2007) WOCSDICE Conf.
- Lahreche, H.¹ Wilk, A.² Bove, P.³ Lijadi, M.⁴ Langer, R.⁵ Thuret, J.⁶ De Jaeger, J.C.⁷ Hoel, V.⁸ Delage, S.⁹

5
- 38849175696
- TIGER AlGaN/GaN HEMT technology
- Amsterdam, The Netherlands
- Morvan, E., Grimbert, B., Hoel, V., Caillas, N., Di Forte-Poisson, M.A., Dua, C., Aubry, R., Ducatteau, D., Delos, E., De Jaeger, J.C., and Delage, S.: ' TIGER AlGaN/GaN HEMT technology ', GAAS Conf., Amsterdam, The Netherlands, 2004
- (2004) GAAS Conf.
- Morvan, E.¹ Grimbert, B.² Hoel, V.³ Caillas, N.⁴ Di Forte-Poisson, M.A.⁵ Dua, C.⁶ Aubry, R.⁷ Ducatteau, D.⁸ Delos, E.⁹ De Jaeger, J.C.¹⁰ Delage, S.¹¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.