Electrothermal analysis of AlGaN/GaN high electron mobility transistors

Journal of Computational Electronics

Volumn 7, Issue 3, 2008, Pages 236-239

  Sridharan, Sriraaman ^a   Venkatachalam, Anusha ^a   Yoder, P D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Electrothermal transport; Gallium nitride; HEMT; Phonon population

Indexed keywords

ELECTRON MOBILITY;

ALGAN/GAN; ELECTROTHERMAL TRANSPORT; GALLIUM NITRIDE; HEMT; PHONON POPULATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 50949130905     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-008-0210-x     Document Type: Article

References (6)

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