Random telegraph signal noise in phase change memory devices

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 743-749

  Fugazza, Davide ^a   Ielmini, Daniele ^a   Lavizzari, Simone ^a   Lacaita, Andrea L ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Meyer Neldel law; Non volatile memory; Phase change memory (PCM); Random resistance network (RRN); Random telegraph noise

Indexed keywords

MEYER-NELDEL LAW; NON-VOLATILE MEMORIES; PHASE CHANGE MEMORY (PCM); RANDOM TELEGRAPH NOISE; RESISTANCE NETWORK;

RELIABILITY; SIGNAL NOISE MEASUREMENT; TELEGRAPH;

PHASE CHANGE MEMORY;

EID: 77957913753     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488741     Document Type: Conference Paper

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