Carbon nanotube radio-frequency single-electron transistor

Journal of Low Temperature Physics

Volumn 136, Issue 5-6, 2004, Pages 465-480

  Roschier, Leif ^a   Sillanpää, Mika ^a   Taihong, Wang ^b   Ahlskog, Markus ^c   Iijima, Sumio ^d   Hakonen, Pertti ^a  

^a AALTO UNIVERSITY   (Finland)

^b INSTITUTE OF PHYSICS   (China)

^c UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^d NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARBON NANOTUBES; ELECTRIC CHARGE; ELECTRIC IMPEDANCE; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; EQUATIONS OF MOTION; INDUCTANCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SENSITIVITY ANALYSIS;

CHARGE SENSITIVITIES; ELECTRODE STRUCTURES; MULTIWALLED CARBON NANOTUBES; RADIO FREQUENCY SINGLE ELECTRON TRANSISTOR;

TRANSISTORS;

EID: 4544359808     PISSN: 00222291     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:JOLT.0000041278.59298.73     Document Type: Article

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