Giant random telegraph signals in the carbon nanotubes as a single defect probe

Applied Physics Letters

Volumn 86, Issue 16, 2005, Pages 1-3

  Liu, Fei ^a   Bao, Mingqiang ^a   Kim, Hyung Jun ^a   Wang, Kang L ^a   Li, Chao ^b   Liu, Xiaolei ^b   Zhou, Chongwu ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of Southern California ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GIANT RANDOM TELEGRAPH SIGNALS (RTS); MOBILITY MODULATION; SINGLE DEFECT PROBES; SINGLE-WALL CARBON NANOTUBES;

CHEMICAL VAPOR DEPOSITION; DEFECTS; FIELD EFFECT TRANSISTORS; MODULATION; MOSFET DEVICES; NANOTECHNOLOGY; SILICA;

CARBON NANOTUBES;

EID: 20844438330     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1901822     Document Type: Article

References (21)

1. P. Dutta and P. M. Horn, Rev. Mod. Phys. 53, 497 (1981).
2. M. B. Weissman, Rev. Mod. Phys. 60, 537 (1988).
3. M. J. Kirton and M. J. Uren, Appl. Phys. Lett. 48, 1270 (1986).
4. K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, Phys. Rev. Lett. 52, 228 (1984).
5. D. H. Cobden, A. Savchenko, M. Pepper, N. K. Patel, and D. A. Ritchie, Phys. Rev. Lett. 69, 502 (1992).
6. G. Zimmerli, T. M. Eiles, R. L. Kautz, and J. M. Martinis, Appl. Phys. Lett. 61, 237 (1992).
7. M. G. Peters, J. I. Dijkhuis, and L. W. Molenkamp, J. Appl. Phys. 86, 1523 (1999).
8. 2004 International Technology Roadmap for Semiconductors.
9. T. W. Odom, J. L. Huang, P. Kim, and C. M. Lieber, Nature (London) 62, 391 (1998).
10. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science 292, 1897 (2001).
11. D. Zhang, C. Li, S. Han, X. Liu, T. Tang, W. Jin, and C. Zhou, Appl. Phys. Lett. 82, 112 (2003).
12. D. H. Cobhen and B. A. Muzykanskii, Phys. Rev. Lett. 75, 4274 (1995), and references herein.
13. M. Xiao, I. Martin, and H. W. Jiang, Phys. Rev. Lett. 91, 078301-1 (2003).
14. M. Xiao, I. Martin, E. Yablonovitch, and H. W. Jiang, Nature (London) 430, 435 (2004).
15. J. Kong, H. T. Soh, A. M. Cassell, C. F. Quate, and H. J. Dai, Nature (London) 395, 878 (1998).
16. A. Ohata, A. Toriumi, M. Iwase, and K. Natori, J. Appl. Phys. 68, 200 (1989).
17. Y. Shi, H. B. M. Bu, X. L. Yuna, S. L. Gu, B. Shen, P. Han, R. Zhang, and Y. D. Zheng, Semicond. Sci. Technol. 16, 21 (2001).
18. H. M. Bu, Y. Shi, X. L. Yuan, J. Wu, S. L. Gu, Y. D. Zheng, H. Majima, H. Ishikuro, and T. Hiramoto, Appl. Phys. Lett. 76, 3259 (2000).
19. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature (London) 424, 654 (2003).
20. M. J. Kirton, M. J. Uren, S. Collins, M. Schulz, A. Karmann, and K. Scheffer, Semicond. Sci. Technol. 4, 1116 (1989).
21. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, Phys. Rev. Lett. 89, 106801 (2002).