-
1
-
-
29344472607
-
Radiation-induced soft errors in advanced semiconductor technologies
-
Sep.
-
R. Baumann, "Radiation-induced soft errors in advanced semiconductor technologies," Device and Materials Reliability, IEEE Transactions on, vol. 5, no. 3, pp. 305-316, Sep. 2005.
-
(2005)
Device and Materials Reliability, IEEE Transactions on
, vol.5
, Issue.3
, pp. 305-316
-
-
Baumann, R.1
-
2
-
-
29344453384
-
Cache and memory error detection, correction, and reduction techniques for terrestrial servers and workstations
-
Sep.
-
C. Slayman, "Cache and memory error detection, correction, and reduction techniques for terrestrial servers and workstations," Device and Materials Reliability, IEEE Transactions on, vol. 5, no. 3, pp. 397-404, Sep. 2005.
-
(2005)
Device and Materials Reliability, IEEE Transactions on
, vol.5
, Issue.3
, pp. 397-404
-
-
Slayman, C.1
-
3
-
-
8344278950
-
Selective triple modular redundancy (stmr) based single-event upset (seu) tolerant synthesis for fpgas
-
Oct.
-
P. Samudrala, J. Ramos, and S. Katkoori, "Selective triple modular redundancy (stmr) based single-event upset (seu) tolerant synthesis for fpgas," Nuclear Science, IEEE Transactions on, vol. 51, no. 5, pp. 2957-2969, Oct. 2004.
-
(2004)
Nuclear Science, IEEE Transactions on
, vol.51
, Issue.5
, pp. 2957-2969
-
-
Samudrala, P.1
Ramos, J.2
Katkoori, S.3
-
4
-
-
37249076475
-
A comparison of tmr with alternative fault-tolerant design techniques for fpgas
-
Dec.
-
K. Morgan, D. McMurtrey, B. Pratt, and M. Wirthlin, "A comparison of tmr with alternative fault-tolerant design techniques for fpgas," Nuclear Science, IEEE Transactions on, vol. 54, no. 6, pp. 2065-2072, Dec. 2007.
-
(2007)
Nuclear Science, IEEE Transactions on
, vol.54
, Issue.6
, pp. 2065-2072
-
-
Morgan, K.1
McMurtrey, D.2
Pratt, B.3
Wirthlin, M.4
-
5
-
-
58849095005
-
Self-voting dual-modular-redundancy circuits for single-eventtransient mitigation
-
dec.
-
J. Teifel, "Self-voting dual-modular-redundancy circuits for single-eventtransient mitigation," Nuclear Science, IEEE Transactions on, vol. 55, no. 6, pp. 3435-3439, dec. 2008.
-
(2008)
Nuclear Science, IEEE Transactions on
, vol.55
, Issue.6
, pp. 3435-3439
-
-
Teifel, J.1
-
7
-
-
0028727191
-
Two cmos memory cells suitable for the design of seu-tolerant vlsi circuits
-
Dec.
-
R. Velazco, D. Bessot, S. Duzellier, R. Ecoffet, and R. Koga, "Two cmos memory cells suitable for the design of seu-tolerant vlsi circuits," Nuclear Science, IEEE Transactions on, vol. 41, no. 6, pp. 2229-2234, Dec. 1994.
-
(1994)
Nuclear Science, IEEE Transactions on
, vol.41
, Issue.6
, pp. 2229-2234
-
-
Velazco, R.1
Bessot, D.2
Duzellier, S.3
Ecoffet, R.4
Koga, R.5
-
8
-
-
0030375853
-
Upset hardened memory design for submicron cmos technology
-
Dec.
-
T. Calin, M. Nicolaidis, and R. Velazco, "Upset hardened memory design for submicron cmos technology," Nuclear Science, IEEE Transactions on, vol. 43, no. 6, pp. 2874-2878, Dec. 1996.
-
(1996)
Nuclear Science, IEEE Transactions on
, vol.43
, Issue.6
, pp. 2874-2878
-
-
Calin, T.1
Nicolaidis, M.2
Velazco, R.3
-
9
-
-
47349132797
-
Built-in soft error resilience for robust system design
-
Jun.
-
S. Mitra, M. Zhang, N. Seifert, T. Mak, and K. S. Kim, "Built-in soft error resilience for robust system design," in Integrated Circuit Design and Technology, IEEE Intl. Conference on, Jun. 2007, pp. 1-6.
-
(2007)
Integrated Circuit Design and Technology, IEEE Intl. Conference on
, pp. 1-6
-
-
Mitra, S.1
Zhang, M.2
Seifert, N.3
Mak, T.4
Kim, K.S.5
-
10
-
-
2542474434
-
Rc hardened fpga configuration sram cell design
-
Apr.
-
W. Wang, "Rc hardened fpga configuration sram cell design," Electronics Letters, vol. 40, no. 9, pp. 525-526, Apr. 2004.
-
(2004)
Electronics Letters
, vol.40
, Issue.9
, pp. 525-526
-
-
Wang, W.1
-
11
-
-
52049112062
-
Sram cell design protected from seu upsets
-
Jul.
-
Y. Shiyanovskii, F. Wolff, and C. Papachristou, "Sram cell design protected from seu upsets," in On-Line Testing Symposium, 14th IEEE Intl., Jul. 2008, pp. 169-170.
-
(2008)
On-Line Testing Symposium, 14th IEEE Intl
, pp. 169-170
-
-
Shiyanovskii, Y.1
Wolff, F.2
Papachristou, C.3
-
12
-
-
33144460955
-
Rhbd techniques for mitigating effects of single-event hits using guard-gates
-
Dec.
-
A. Balasubramanian, B. Bhuva, J. Black, and L. Massengill, "Rhbd techniques for mitigating effects of single-event hits using guard-gates," Nuclear Science, IEEE Transactions on, vol. 52, no. 6, pp. 2531-2535, Dec. 2005.
-
(2005)
Nuclear Science, IEEE Transactions on
, vol.52
, Issue.6
, pp. 2531-2535
-
-
Balasubramanian, A.1
Bhuva, B.2
Black, J.3
Massengill, L.4
-
13
-
-
33846326848
-
Single-event tolerant latch using cascode-voltage switch logic gates
-
Dec.
-
M. C. Casey, B. L. Bhuva, J. D. Black, L. W. Massengill, O. A. Amusan, and A. F. Witulski, "Single-event tolerant latch using cascode-voltage switch logic gates," Nuclear Science, IEEE Transactions on, vol. 53, no. 6, pp. 3386-3391, Dec. 2006.
-
(2006)
Nuclear Science, IEEE Transactions on
, vol.53
, Issue.6
, pp. 3386-3391
-
-
Casey, M.C.1
Bhuva, B.L.2
Black, J.D.3
Massengill, L.W.4
Amusan, O.A.5
Witulski, A.F.6
-
14
-
-
11044226945
-
Alpha-particle seu performance of sram with triple well
-
Dec.
-
H. Puchner, D. Radaelli, and A. Chatila, "Alpha-particle seu performance of sram with triple well," Nuclear Science, IEEE Transactions on, vol. 51, no. 6, pp. 3525-3528, Dec. 2004.
-
(2004)
Nuclear Science, IEEE Transactions on
, vol.51
, Issue.6
, pp. 3525-3528
-
-
Puchner, H.1
Radaelli, D.2
Chatila, A.3
-
15
-
-
58849154103
-
Single event mechanisms in 90nm triple-well cmos devices
-
Dec.
-
T. Roy, A. Witulski, R. Schrimpf, M. Alles, and L. Massengill, "Single event mechanisms in 90nm triple-well cmos devices," Nuclear Science, IEEE Transactions on, vol. 55, no. 6, pp. 2948-2956, Dec. 2008.
-
(2008)
Nuclear Science, IEEE Transactions on
, vol.55
, Issue.6
, pp. 2948-2956
-
-
Roy, T.1
Witulski, A.2
Schrimpf, R.3
Alles, M.4
Massengill, L.5
-
16
-
-
1242310284
-
Comparisons of soft error rate for srams in commercial soi and bulk below the 130-nm technology node
-
Dec.
-
P. Roche, G. Gasiot, K. Forbes, V. O'Sullivan, and V. Ferlet, "Comparisons of soft error rate for srams in commercial soi and bulk below the 130-nm technology node," Nuclear Science, IEEE Transactions on, vol. 50, no. 6, pp. 2046-2054, Dec. 2003.
-
(2003)
Nuclear Science, IEEE Transactions on
, vol.50
, Issue.6
, pp. 2046-2054
-
-
Roche, P.1
Gasiot, G.2
Forbes, K.3
O'Sullivan, V.4
Ferlet, V.5
-
17
-
-
33144454816
-
Investigation of multibit upsets in a 150 nm technology sram device
-
Dec.
-
D. Radaelli, H. Puchner, S. Wong, and S. Daniel, "Investigation of multibit upsets in a 150 nm technology sram device," Nuclear Science, IEEE Transactions on, vol. 52, no. 6, pp. 2433-2437, Dec. 2005.
-
(2005)
Nuclear Science, IEEE Transactions on
, vol.52
, Issue.6
, pp. 2433-2437
-
-
Radaelli, D.1
Puchner, H.2
Wong, S.3
Daniel, S.4
-
19
-
-
84941341670
-
Analyzing soft errors in leakage optimized sram design
-
Jan.
-
V. Degalahal, N. Vijaykrishnan, and M. Irwin, "Analyzing soft errors in leakage optimized sram design," in VLSI Design, 16th Intl. Conference on, Jan. 2003, pp. 227-233.
-
(2003)
VLSI Design, 16th Intl. Conference on
, pp. 227-233
-
-
Degalahal, V.1
Vijaykrishnan, N.2
Irwin, M.3
-
20
-
-
54249151966
-
Lowleakage robust sram cell design for sub-100nm technologies
-
Jan.
-
S. Yang, W. Wolf, W. Wang, N. Vijaykrishnan, and Y. Xie, "Lowleakage robust sram cell design for sub-100nm technologies," in Design Automation Conference, Asia and South Pacific, vol. 1, Jan. 2005, pp. 539-544.
-
(2005)
Design Automation Conference, Asia and South Pacific
, vol.1
, pp. 539-544
-
-
Yang, S.1
Wolf, W.2
Wang, W.3
Vijaykrishnan, N.4
Xie, Y.5
-
21
-
-
72349097712
-
A soft error tolerant 10t sram bit-cell with differential read capability
-
Dec.
-
S. Jahinuzzaman, D. Rennie, and M. Sachdev, "A soft error tolerant 10t sram bit-cell with differential read capability," Nuclear Science, IEEE Transactions on, vol. 56, no. 6, pp. 3768-3773, Dec. 2009.
-
(2009)
Nuclear Science, IEEE Transactions on
, vol.56
, Issue.6
, pp. 3768-3773
-
-
Jahinuzzaman, S.1
Rennie, D.2
Sachdev, M.3
-
22
-
-
77957919494
-
-
Berkeley predictive technology model (ptm). [Online]. Available
-
Berkeley predictive technology model (ptm). [Online]. Available: http://ptm.asu.edu
-
-
-
-
23
-
-
0024048843
-
Experimental determination of time constants for ion-induced transients in static memories
-
Jul.
-
H. Weaver, J. Browning, B. Shafer, and J. Fu, "Experimental determination of time constants for ion-induced transients in static memories," Electron Devices, IEEE Transactions on, vol. 35, no. 7, pp. 1116-1119, Jul. 1988.
-
(1988)
Electron Devices, IEEE Transactions on
, vol.35
, Issue.7
, pp. 1116-1119
-
-
Weaver, H.1
Browning, J.2
Shafer, B.3
Fu, J.4
-
24
-
-
0034450511
-
Impact of cmos technology scaling on the atmospheric neutron soft error rate
-
Dec.
-
P. Hazucha and C. Svensson, "Impact of cmos technology scaling on the atmospheric neutron soft error rate," Nuclear Science, IEEE Transactions on, vol. 47, no. 6, pp. 2586-2594, Dec. 2000.
-
(2000)
Nuclear Science, IEEE Transactions on
, vol.47
, Issue.6
, pp. 2586-2594
-
-
Hazucha, P.1
Svensson, C.2
-
25
-
-
0038721289
-
Basic mechanisms and modeling of single-event upset in digital microelectronics
-
Jun.
-
P. Dodd and L. Massengill, "Basic mechanisms and modeling of single-event upset in digital microelectronics," Nuclear Science, IEEE Transactions on, vol. 50, no. 3, pp. 583-602, Jun. 2003.
-
(2003)
Nuclear Science, IEEE Transactions on
, vol.50
, Issue.3
, pp. 583-602
-
-
Dodd, P.1
Massengill, L.2
-
26
-
-
34548816767
-
Critical charge characterization for soft error rate modeling in 90nm sram
-
May
-
R. Naseer, Y. Boulghassoul, J. Draper, S. DasGupta, and A. Witulski, "Critical charge characterization for soft error rate modeling in 90nm sram," in Circuits and Systems, IEEE Intl. Symposium on, May 2007, pp. 1879-1882.
-
(2007)
Circuits and Systems, IEEE Intl. Symposium on
, pp. 1879-1882
-
-
Naseer, R.1
Boulghassoul, Y.2
Draper, J.3
DasGupta, S.4
Witulski, A.5
-
27
-
-
0020298427
-
Collection of charge on junction nodes from ion tracks
-
Dec.
-
G. C. Messenger, "Collection of charge on junction nodes from ion tracks," Nuclear Science, IEEE Transactions on, vol. 29, no. 6, pp. 2024-2031, Dec. 1982.
-
(1982)
Nuclear Science, IEEE Transactions on
, vol.29
, Issue.6
, pp. 2024-2031
-
-
Messenger, G.C.1
-
28
-
-
0033324768
-
Determination of key parameters for seu occurrence using 3-d full cell sram simulations
-
Dec.
-
P. Roche, J. Palau, G. Bruguier, C. Tavernier, R. Ecoffet, and J. Gasiot, "Determination of key parameters for seu occurrence using 3-d full cell sram simulations," Nuclear Science, IEEE Transactions on, vol. 46, no. 6, pp. 1354-1362, Dec. 1999.
-
(1999)
Nuclear Science, IEEE Transactions on
, vol.46
, Issue.6
, pp. 1354-1362
-
-
Roche, P.1
Palau, J.2
Bruguier, G.3
Tavernier, C.4
Ecoffet, R.5
Gasiot, J.6
-
29
-
-
34247192070
-
Factors that impact the critical charge of memory elements
-
T. Heijmen, D. Giot, and P. Roche, "Factors that impact the critical charge of memory elements," in On-Line Testing Symposium, 12th IEEE Intl., 2006, pp. 6 pp.-.
-
(2006)
On-Line Testing Symposium, 12th IEEE Intl
, pp. 6
-
-
Heijmen, T.1
Giot, D.2
Roche, P.3
|