메뉴 건너뛰기




Volumn , Issue , 2010, Pages 399-404

A new low-power soft-error tolerant SRAM cell

Author keywords

[No Author keywords available]

Indexed keywords

6T-CELL; 6T-SRAM; 90 NM TECHNOLOGY; CMOS TECHNOLOGY; ERROR TOLERANT; GUARD-GATES; LOW POWER; SOFT ERROR; SRAM CELL; STATIC POWER CONSUMPTION;

EID: 77957904179     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISVLSI.2010.83     Document Type: Conference Paper
Times cited : (5)

References (29)
  • 1
    • 29344472607 scopus 로고    scopus 로고
    • Radiation-induced soft errors in advanced semiconductor technologies
    • Sep.
    • R. Baumann, "Radiation-induced soft errors in advanced semiconductor technologies," Device and Materials Reliability, IEEE Transactions on, vol. 5, no. 3, pp. 305-316, Sep. 2005.
    • (2005) Device and Materials Reliability, IEEE Transactions on , vol.5 , Issue.3 , pp. 305-316
    • Baumann, R.1
  • 2
    • 29344453384 scopus 로고    scopus 로고
    • Cache and memory error detection, correction, and reduction techniques for terrestrial servers and workstations
    • Sep.
    • C. Slayman, "Cache and memory error detection, correction, and reduction techniques for terrestrial servers and workstations," Device and Materials Reliability, IEEE Transactions on, vol. 5, no. 3, pp. 397-404, Sep. 2005.
    • (2005) Device and Materials Reliability, IEEE Transactions on , vol.5 , Issue.3 , pp. 397-404
    • Slayman, C.1
  • 3
    • 8344278950 scopus 로고    scopus 로고
    • Selective triple modular redundancy (stmr) based single-event upset (seu) tolerant synthesis for fpgas
    • Oct.
    • P. Samudrala, J. Ramos, and S. Katkoori, "Selective triple modular redundancy (stmr) based single-event upset (seu) tolerant synthesis for fpgas," Nuclear Science, IEEE Transactions on, vol. 51, no. 5, pp. 2957-2969, Oct. 2004.
    • (2004) Nuclear Science, IEEE Transactions on , vol.51 , Issue.5 , pp. 2957-2969
    • Samudrala, P.1    Ramos, J.2    Katkoori, S.3
  • 4
    • 37249076475 scopus 로고    scopus 로고
    • A comparison of tmr with alternative fault-tolerant design techniques for fpgas
    • Dec.
    • K. Morgan, D. McMurtrey, B. Pratt, and M. Wirthlin, "A comparison of tmr with alternative fault-tolerant design techniques for fpgas," Nuclear Science, IEEE Transactions on, vol. 54, no. 6, pp. 2065-2072, Dec. 2007.
    • (2007) Nuclear Science, IEEE Transactions on , vol.54 , Issue.6 , pp. 2065-2072
    • Morgan, K.1    McMurtrey, D.2    Pratt, B.3    Wirthlin, M.4
  • 5
    • 58849095005 scopus 로고    scopus 로고
    • Self-voting dual-modular-redundancy circuits for single-eventtransient mitigation
    • dec.
    • J. Teifel, "Self-voting dual-modular-redundancy circuits for single-eventtransient mitigation," Nuclear Science, IEEE Transactions on, vol. 55, no. 6, pp. 3435-3439, dec. 2008.
    • (2008) Nuclear Science, IEEE Transactions on , vol.55 , Issue.6 , pp. 3435-3439
    • Teifel, J.1
  • 7
  • 8
    • 0030375853 scopus 로고    scopus 로고
    • Upset hardened memory design for submicron cmos technology
    • Dec.
    • T. Calin, M. Nicolaidis, and R. Velazco, "Upset hardened memory design for submicron cmos technology," Nuclear Science, IEEE Transactions on, vol. 43, no. 6, pp. 2874-2878, Dec. 1996.
    • (1996) Nuclear Science, IEEE Transactions on , vol.43 , Issue.6 , pp. 2874-2878
    • Calin, T.1    Nicolaidis, M.2    Velazco, R.3
  • 10
    • 2542474434 scopus 로고    scopus 로고
    • Rc hardened fpga configuration sram cell design
    • Apr.
    • W. Wang, "Rc hardened fpga configuration sram cell design," Electronics Letters, vol. 40, no. 9, pp. 525-526, Apr. 2004.
    • (2004) Electronics Letters , vol.40 , Issue.9 , pp. 525-526
    • Wang, W.1
  • 12
    • 33144460955 scopus 로고    scopus 로고
    • Rhbd techniques for mitigating effects of single-event hits using guard-gates
    • Dec.
    • A. Balasubramanian, B. Bhuva, J. Black, and L. Massengill, "Rhbd techniques for mitigating effects of single-event hits using guard-gates," Nuclear Science, IEEE Transactions on, vol. 52, no. 6, pp. 2531-2535, Dec. 2005.
    • (2005) Nuclear Science, IEEE Transactions on , vol.52 , Issue.6 , pp. 2531-2535
    • Balasubramanian, A.1    Bhuva, B.2    Black, J.3    Massengill, L.4
  • 14
    • 11044226945 scopus 로고    scopus 로고
    • Alpha-particle seu performance of sram with triple well
    • Dec.
    • H. Puchner, D. Radaelli, and A. Chatila, "Alpha-particle seu performance of sram with triple well," Nuclear Science, IEEE Transactions on, vol. 51, no. 6, pp. 3525-3528, Dec. 2004.
    • (2004) Nuclear Science, IEEE Transactions on , vol.51 , Issue.6 , pp. 3525-3528
    • Puchner, H.1    Radaelli, D.2    Chatila, A.3
  • 16
    • 1242310284 scopus 로고    scopus 로고
    • Comparisons of soft error rate for srams in commercial soi and bulk below the 130-nm technology node
    • Dec.
    • P. Roche, G. Gasiot, K. Forbes, V. O'Sullivan, and V. Ferlet, "Comparisons of soft error rate for srams in commercial soi and bulk below the 130-nm technology node," Nuclear Science, IEEE Transactions on, vol. 50, no. 6, pp. 2046-2054, Dec. 2003.
    • (2003) Nuclear Science, IEEE Transactions on , vol.50 , Issue.6 , pp. 2046-2054
    • Roche, P.1    Gasiot, G.2    Forbes, K.3    O'Sullivan, V.4    Ferlet, V.5
  • 17
    • 33144454816 scopus 로고    scopus 로고
    • Investigation of multibit upsets in a 150 nm technology sram device
    • Dec.
    • D. Radaelli, H. Puchner, S. Wong, and S. Daniel, "Investigation of multibit upsets in a 150 nm technology sram device," Nuclear Science, IEEE Transactions on, vol. 52, no. 6, pp. 2433-2437, Dec. 2005.
    • (2005) Nuclear Science, IEEE Transactions on , vol.52 , Issue.6 , pp. 2433-2437
    • Radaelli, D.1    Puchner, H.2    Wong, S.3    Daniel, S.4
  • 21
    • 72349097712 scopus 로고    scopus 로고
    • A soft error tolerant 10t sram bit-cell with differential read capability
    • Dec.
    • S. Jahinuzzaman, D. Rennie, and M. Sachdev, "A soft error tolerant 10t sram bit-cell with differential read capability," Nuclear Science, IEEE Transactions on, vol. 56, no. 6, pp. 3768-3773, Dec. 2009.
    • (2009) Nuclear Science, IEEE Transactions on , vol.56 , Issue.6 , pp. 3768-3773
    • Jahinuzzaman, S.1    Rennie, D.2    Sachdev, M.3
  • 22
    • 77957919494 scopus 로고    scopus 로고
    • Berkeley predictive technology model (ptm). [Online]. Available
    • Berkeley predictive technology model (ptm). [Online]. Available: http://ptm.asu.edu
  • 23
    • 0024048843 scopus 로고
    • Experimental determination of time constants for ion-induced transients in static memories
    • Jul.
    • H. Weaver, J. Browning, B. Shafer, and J. Fu, "Experimental determination of time constants for ion-induced transients in static memories," Electron Devices, IEEE Transactions on, vol. 35, no. 7, pp. 1116-1119, Jul. 1988.
    • (1988) Electron Devices, IEEE Transactions on , vol.35 , Issue.7 , pp. 1116-1119
    • Weaver, H.1    Browning, J.2    Shafer, B.3    Fu, J.4
  • 24
    • 0034450511 scopus 로고    scopus 로고
    • Impact of cmos technology scaling on the atmospheric neutron soft error rate
    • Dec.
    • P. Hazucha and C. Svensson, "Impact of cmos technology scaling on the atmospheric neutron soft error rate," Nuclear Science, IEEE Transactions on, vol. 47, no. 6, pp. 2586-2594, Dec. 2000.
    • (2000) Nuclear Science, IEEE Transactions on , vol.47 , Issue.6 , pp. 2586-2594
    • Hazucha, P.1    Svensson, C.2
  • 25
    • 0038721289 scopus 로고    scopus 로고
    • Basic mechanisms and modeling of single-event upset in digital microelectronics
    • Jun.
    • P. Dodd and L. Massengill, "Basic mechanisms and modeling of single-event upset in digital microelectronics," Nuclear Science, IEEE Transactions on, vol. 50, no. 3, pp. 583-602, Jun. 2003.
    • (2003) Nuclear Science, IEEE Transactions on , vol.50 , Issue.3 , pp. 583-602
    • Dodd, P.1    Massengill, L.2
  • 27
    • 0020298427 scopus 로고
    • Collection of charge on junction nodes from ion tracks
    • Dec.
    • G. C. Messenger, "Collection of charge on junction nodes from ion tracks," Nuclear Science, IEEE Transactions on, vol. 29, no. 6, pp. 2024-2031, Dec. 1982.
    • (1982) Nuclear Science, IEEE Transactions on , vol.29 , Issue.6 , pp. 2024-2031
    • Messenger, G.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.