Single event mechanisms in 90 nm triple-well CMOS devices

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 2948-2956

  Roy, Tania ^a   Witulski, A F ^a   Schrimpf, R D ^a   Alles, M L ^a   Massengill, L W ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

P well contact doping depth; Parasitic bipolar; Potential modulation; Pulse shape; Pulse width; Single event; TCAD; Triple well

Indexed keywords

P-WELL CONTACT DOPING DEPTH; PARASITIC BIPOLAR; POTENTIAL MODULATION; PULSE SHAPE; PULSE WIDTH; SINGLE EVENT; TCAD; TRIPLE WELL;

MODULATION;

EID: 58849154103     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2005831     Document Type: Conference Paper

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