Critical charge characterization for soft error rate modeling in 90nm SRAM

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn , Issue , 2007, Pages 1879-1882

  Naseer, Riaz ^a   Boulghassoul, Younes ^a   Draper, Jeff ^a   DasGupta, Sandeepan ^b   Witulski, Art ^b  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CHARGE; ERROR ANALYSIS; MATHEMATICAL MODELS; STANDBY POWER SERVICE; THREE DIMENSIONAL COMPUTER GRAPHICS;

CURRENT MODELS; MEMORY CIRCUITS; SOFT ERROR RATE;

RANDOM ACCESS STORAGE;

EID: 34548816767     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iscas.2007.378282     Document Type: Conference Paper

References (9)

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