A soft error tolerant 10T SRAM bit-cell with differential read capability

IEEE Transactions on Nuclear Science

Volumn 56, Issue 6, 2009, Pages 3768-3773

  Jahinuzzaman, Shah M ^a   Rennie, David J ^b   Sachdev, Manoj ^b  

^a Gina Cody School of Engineering and Computer Science   (Canada)

^b UNIVERSITY OF WATERLOO   (Canada)

Author keywords

Differential read; Single event effects; Soft error rates; Srams; Standard process

Indexed keywords

6T-CELL; 6T-SRAM; CMOS TECHNOLOGY; LEAKAGE POWER; NEUTRON RADIATIONS; NOISE MARGINS; READ OPERATION; ROBUST SENSING; SINGLE EVENT EFFECTS; SOFT ERROR; SOFT ERROR RATE; SRAM CELL; SUPPLY VOLTAGES;

CELLS; CMOS INTEGRATED CIRCUITS; LEAKAGE CURRENTS;

STATIC RANDOM ACCESS STORAGE;

EID: 72349097712     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2032090     Document Type: Conference Paper

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