Reliability status of GaN transistors and MMICs in Europe

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 129-133

  Dammann, M ^a   Casar M ^a   Konstanzer, H ^a   Waltereit, P ^a   Quay, R ^a   Bronner, W ^a   Kiefer, R ^a   Muller S ^a   Mikulla, M ^a   Van Der Wel, P J ^b   Rodle T ^b   Bourgeois, F ^c   Riepe, K ^c  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b NXP SEMICONDUCTORS   (Netherlands)

^c United Monolithic Semiconductors GmbH   (Germany)

Author keywords

DC stress test; GaN HEMT; GaN MMIC; Reliability; RF stress test

Indexed keywords

GAN HEMTS; GAN MMIC; HIGH CURRENTS; HIGH FREQUENCY POWER; HIGH VOLTAGE; LARGE-SIGNALS; OPERATION CONDITIONS; RF-STRESS TEST; STRESS TEST;

DC POWER TRANSMISSION; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RELIABILITY; TESTING;

ELECTRONIC EQUIPMENT TESTING;

EID: 77957901469     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488841     Document Type: Conference Paper

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