Reliability of AlGaN/GaN HEMTs under DC- and RF-operation

2009 Reliability of Compound Semiconductors Digest - ROCS Workshop

Volumn , Issue , 2009, Pages 19-32

  Dammann, M ^a   Casar M ^a   Waltereit, P ^a   Bronner, W ^a   Konstanzer, H ^a   Quay, R ^a   Muller S ^a   Mikulla, M ^a   Ambacher, O ^a   Van Der Wel, P ^b   Rodle T ^b   Behtash, R ^c   Bourgeois, F ^c   Riepe, K ^c  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b NXP SEMICONDUCTORS   (Netherlands)

^c United Monolithic Semiconductors GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; DC VOLTAGE; DEVICE RELIABILITY; DRAIN VOLTAGE; GATE METALS; GATE-LEAKAGE CURRENT; HIGH DRAIN VOLTAGE; HIGH TEMPERATURE; LONG-TERM STRESS; POWER FETS; PROCESSING TECHNOLOGIES; RF STRESS; SHORT TERM; STEP-STRESS;

ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; RELIABILITY;

DRAIN CURRENT;

EID: 72449182126     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Waltereit et al, Physica Status Solidi C, pp. 1369-1372, 2009.
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6. Kuball et al., IEEE Electron Device Letters, pp. 7-9, 2002.
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8. Joh et al., IEEE Electron Device Letters, pp. 287-289, 2008.
9. Ivo et al., IRPS 2009, pp. 71-75.