High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable x-band MMIC space technology

2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010

Volumn , Issue , 2010, Pages

  Waltereit, P ^a   Bronner, W ^a   Kiefer, R ^a   Quay, R ^a   Kuhn J ^a   Van Raay, F ^a   Dammann, M ^a   Muller S ^a   Libal, C ^a   Meier, T ^a   Mikulla, M ^a   Ambacher, O ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

GaN; HEMT; MMIC; Reliability; Space

Indexed keywords

3-INCH SIC SUBSTRATES; CHANNEL TEMPERATURE; FRONT-SIDE PROCESSING; GAN; HIGH REPRODUCIBILITY; LOW-LEAKAGE CURRENT; PROCESS TECHNOLOGIES; SPACE;

EPITAXIAL GROWTH; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SUBSTRATES;

TECHNOLOGY;

EID: 84887333820     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. M. Rosker et al., "The DARPA Wide Band Gap Semiconductors for RF Applications (WBGS-RF) Program: Phase II Results", CS ManTech 2009, paper 1.2.
2. P. Waltereit et al. "GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability", phys. Stat. Sol. A 206 (6), 1215-220 (2009).
3. J. Kühn et al, "Harmonic Termination of AlGaN/GaN/(Al)GaNSingle and Double-Heterojunction HEMTs", 5th German Microwave conference 2010, submitted.
4. J. Kühn et al, Design of X-Band GaN MMICs Using Field Plates", Proceedings of the 4th European Microwave Integrated Circuits Conference EuMIC 2009, pp. 33-36, Rome, Italy, September 2009 (London, Horizon House, 2009).
5. M. Kuball et al., "Integrated Raman - IR Thermography on AlGaN/GaN Transistors", IEEE MTT-S IMS Dig. 2006, pp. 1339-1342.