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Volumn 48, Issue 12, 2009, Pages
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Effect of GaN buffer layer growth pressure on the device characteristics of AlGaN/GaN high-electron-mobility transistors on Si
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS;
BREAKDOWN VOLTAGE;
BUFFER LEAKAGE;
CHANNEL CONDUCTION;
CURRENT COLLAPSE;
DEVICE CHARACTERISTICS;
DISLOCATION DENSITIES;
FREE CARRIERS;
GAN BUFFER LAYERS;
GATE DRAIN;
GROWTH PRESSURE;
IMPURITY COMPENSATION;
LOW PRESSURES;
METALORGANIC CHEMICAL VAPOR DEPOSITION;
ORDER OF MAGNITUDE;
PHOTOLUMINESCENCE ANALYSIS;
SECONDARY ION MASS SPECTROSCOPY;
SEMI-INSULATING GAN;
YELLOW LUMINESCENCE;
ATMOSPHERIC PRESSURE;
CHEMICAL VAPOR DEPOSITION;
ELECTRIC CURRENT MEASUREMENT;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
HETEROJUNCTIONS;
LIGHT;
PHOTODEGRADATION;
PRESSURE EFFECTS;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SINGLE CRYSTALS;
X RAY DIFFRACTION ANALYSIS;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 75149116106
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.48.121002 Document Type: Article |
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Times cited : (39)
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References (12)
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