Detailed investigation of the conducting channel in poly(3-hexylthiophene) field effect transistors

Journal of Applied Physics

Volumn 108, Issue 6, 2010, Pages

  Von Hauff, Elizabeth ^a   Johnen, Fabian ^a   Tunc, Ali Veysel ^a   Govor, Leonid ^a   Parisi, Jürgen ^a  

^a UNIVERSITY OF OLDENBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING CHANNELS; DEVICE PERFORMANCE; FIELD-EFFECT MOBILITIES; FOUR-PROBE TECHNIQUES; LAYER THICKNESS; MONITORING CHANGE; OUTPUT CHARACTERISTICS; POLY-3-HEXYLTHIOPHENE; SATURATION REGIME;

CARRIER MOBILITY; ORGANIC FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 77957736495     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3488607     Document Type: Article

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