The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells

Chinese Physics B

Volumn 18, Issue 4, 2009, Pages 1674-1678

  Li, Gui Jun ^a,b,c   Hou, Guo Fu ^a,b,c   Han, Xiao Yan ^a,b,c   Yuan, Yu Jie ^a,b,c   Wei, Chang Chun ^a,b,c   Sun, Jian ^a,b,c   Zhao, Yin ^a,b,c   Geng, Xin Hua ^a,b,c  

^a NANKAI UNIVERSITY   (China)

^b Key Laboratory of Photo electronics Thin Film Devices and Technique of Tianjin   (China)

^c Key Laboratory of Opto Electronic Information Science and Technology   (China)

Author keywords

A Si:H ?c Si:H tandem solar cell; Double N layer; Oxidation interface; Tunnel recombination junction

Indexed keywords

A-SI:H/?C-SI:H TANDEM SOLAR CELL; CURRENT LEAKAGE; CURRENT-VOLTAGE MEASUREMENTS; DOUBLE N LAYER; ELECTRICAL TRANSPORT; SUB-CELLS; TANDEM SOLAR CELLS; TRANSMISSION MEASUREMENTS; TUNNEL RECOMBINATION JUNCTION; TUNNEL RECOMBINATION JUNCTIONS;

CELL MEMBRANES; ELECTRIC POTENTIAL; OHMIC CONTACTS; OPTICAL PROPERTIES; OXIDATION; PHOTOVOLTAIC CELLS; SOLAR CELLS; TUNNEL JUNCTIONS; TUNNELS; WIND TUNNELS;

MICROCRYSTALLINE SILICON;

EID: 67650723768     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/4/066     Document Type: Article

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