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Volumn 13, Issue 10, 2010, Pages

Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor

(5) Suleiman, Sumarlina Azzah a Oh, H J a Du, A b Ng, C M b Lee, S J a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b GLOBALFOUNDRIES SINGAPORE PTE LTD (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; ENERGY DISPERSION X-RAY ANALYSIS; EQUIVALENT OXIDE THICKNESS; GATE STACKS; HIGH SPEED; INTERFACE TRAP DENSITY; LOCALIZED THINNING; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOS-FET; N-CHANNEL; OUT-DIFFUSION; ROUGH INTERFACES; SUBTHRESHOLD SLOPE; THERMAL STABILITY;

DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); LOGIC GATES; PASSIVATION; PH; PLASMA STABILITY; SLOPE STABILITY; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

MOSFET DEVICES;

EID: 77955763640 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3465300 Document Type: Article

Times cited : (8)

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