Internal photoemission spectroscopy of [TaNTaSiN] and [TaNTaCN] metal stacks on Si O2 and [Hf O2 Si O2] dielectric stack

Applied Physics Letters

Volumn 92, Issue 9, 2008, Pages

  Nguyen, N V ^a   Xiong, H D ^a   Suehle, J S ^a   Kirillov, O A ^a   Vogel, E M ^b   Majhi, P ^c   Wen, H C ^c  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b The University of Texas at Dallas   (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); PHOTOELECTRON SPECTROSCOPY;

FLATBAND VOLTAGE MEASUREMENTS; INTERNAL PHOTOEMISSION;

GATES (TRANSISTOR);

EID: 40549135664     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2890760     Document Type: Article

References (14)

1. D. C. Gilmer, R. Hegde, R. Cotton, R. Garcia, V. Dhandapani, D. Triyoso, D. Roan, A. Franke, R. Rai, L. Prabhu, C. Hobbs, J. M. Grant, L. La, S. Samavedam, B. Taylor, H. Tseng, and P. Tobin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1499514 81, 1288 (2002).
2. K. Schaeffer, S. B. Samavedam, D. C. Gilmer, V. Dhandapani, P. J. Tobin, J. Mogab, B.-Y. Nguyen, B. E. White, Jr., S. Dakshina-Murthy, R. S. Rai, Z.-X. Jiang, R. Martin, M. V. Raymond, M. Zavala, L. B. La, J. A. Smith, R. Garcia, D. Roan, M. Kottke, and R. B. Gregory, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1529650 21, 11 (2003).
3. V. K. Admachuk and V. V. Afanas'ev, Prog. Surf. Sci. PSSFBP 0079-6816 10.1016/0079-6816(92)90015-A 41, 111 (1992).
4. N. V. Nguyen, O. Kirillov, H. D. Xiong, and J. S. Suehle, AIP Conf. Proc. APCPCS 0094-243X 10.1063/1.2799389 931, 308 (2007).
5. R. P. Powell, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1659238 11, 2424 (1970).
6. W. Schottky, Z. Phys. ZEPYAA 0044-3328 10.1007/BF01340034 14, 63 (1923).
7. V. V. Afanas'ev, M. Houssa, A. Stesmans, and M. M. Heyns, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1366366 78, 3073 (2001).
8. G. Brown, G. Smith, J. Saulters, K. Matthews, H. C. Wen, P. Majhi, and B. H. Lee, Proceedings of the IEEE SISC Conference 2004 (unpublished), p. 15.
9. R. Jha, J. H. Lee, P. Majhi, and V. Misra, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2136425 87, 223503 (2005).
10. Z. B. Zhang, S. C. Song, K. Choi, J. H. Sim, P. Majhi, and B. H. Lee, 63rd IEEE Device Research Conference Digest (University of California, Santa Barbara, CA, 2005), pp. 223-224.
11. S. Zafar, C. Cabral, Jr., R. Amos, and A. Callegari, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1489098 80, 4858 (2002).
12. Y.-C. Yeo, P. Ranade, T.-J. King, and C. Hu, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2002.1004229 23, 342 (2002).
13. S. B. Samavedam, L. B. La, P. J. Tobin, B. White, C. Hobbs, L. R. C. Fonseca, A. A. Demkov, J. Schaeffer, E. Luckowski, A. Martinez, M. Raymond, D. Triyoso, D. Roan, V. Dhandapani, R. Garcia, S. G. H. Anderson, K. Moore, H.-H. Tseng, C. Capasso, O. Adetutu, D. C. Gilmer, W. J. Taylor, R. Hegde, and J. Grant, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2003, 13.1.1.
14. V. V. Afanas'ev, M. Houssa, A. Stesmans, and M. M. Heyns, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1436299 91, 3079 (2002).