Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Li, Z ^a,b   Schram, T ^a   Stesmans, A ^c   Franquet, A ^a   Witters, T ^a   Pantisano, L ^a   Yamada, N ^a   Tsunoda, T ^a   Hooker, J ^d   De Gendt, S ^a,c   De Meyer, K ^a,b  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d NXP   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

WORK FUNCTION;

CAPPING LAYER; METAL-OXIDE SEMICONDUCTORS; THERMAL TREATMENTS;

MOLYBDENUM;

EID: 51349108206     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2967869     Document Type: Article

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