High-conductive nanocrystalline silicon with phosphorous and boron doping

Applied Surface Science

Volumn 257, Issue 4, 2010, Pages 1337-1341

  Song, Chao ^a,b   Xu, Jun ^a   Chen, Guran ^a   Sun, Hongcheng ^a   Liu, Yu ^a   Li, Wei ^a   Xu, Ling ^a   Ma, Zhongyuan ^a   Chen, Kunji ^a  

^a NANJING UNIVERSITY   (China)

^b HANSHAN NORMAL UNIVERSITY   (China)

Author keywords

Annealing; Electrical properties; Nanostructures; Semiconductors

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; BORON; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; NANOCRYSTALS; NANOSTRUCTURES; PHOSPHORUS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CONDUCTIVITY ACTIVATION ENERGY; DARK CONDUCTIVITY; HIGH CONDUCTIVITY; HYDROGENATED AMORPHOUS SILICON THIN FILMS; NANO-CRYSTALLINE FILMS; NANOCRYSTALLINE SILICON (NC SI); OPTICAL AND ELECTRONIC PROPERTIES; TEMPERATURE-DEPENDENT CONDUCTIVITY;

NANOCRYSTALLINE SILICON;

EID: 77957162521     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.08.065     Document Type: Article

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