Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors

IEEE Transactions on Electron Devices

Volumn 47, Issue 10, 2000, Pages 1909-1916

  Saraniti, Marco ^a,c   Goodnick, Stephen M ^b  

^a IEEE   (United States)

^b Illinois Institute of Technology   (United States)

^c Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BRILLOUIN ZONE; CELLULAR AUTOMATA; CHARGE TRANSPORT MODEL;

ALGORITHMS; AUTOMATA THEORY; COMPUTER SIMULATION; ELECTRON SCATTERING; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

ELECTRON TRANSPORT PROPERTIES;

EID: 0034297464     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.870571     Document Type: Article

References (26)

1. C. Jacoboni and L. Reggiani, "The Monte Carlo method for solution of charge transport in semiconductors with applications to covalent materials," Rev. Mod. Phys.. vol. 55, pp. 645-705, July 1983.
2. M. V. Fischetti and S. E. Laux, "Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and spacecharge effects," Phys. Rev. B. vol. 38, no. 14, pp. 9721-9745, Nov. 1988.
3. K. Hess, Ed., Monte Carlo Device Simulation: Full Band and Beyond. Boston, MA: Kluwer , 1991.
4. K. Kometer, G. Zandler, and P. Vogl, "Lattice-gas cellular-automaton method for semiclassical transport in semiconductors," Phys. Rev. B, vol. 46, pp. 1382-1394, July 1992.
5. J. R. Chelikowsky and M. L. Cohen, "Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blend semiconductors," Phys. Rev. B. vol. 14, pp. 556-582, July 1976
6. W. Potz and P. Vogl, "Theory of optical-phonon deformation potentials in tetrahedral semiconductors," Phys. Rev. B, vol. 24, pp. 2025-2037, Aug. 1981.
7. K. Kunc and O. H. Nielsen, "Lattice dynamics of Zincblende structure compounds-II: Shell model," Comput. Phys. Commun., vol. 17, pp. 413-22, July/Aug. 1979.
8. D. L. Price, J. M. Rowe, and R. M. Nicklow, "Lattice dynamics of Grey Tin and Indium Antimonide," Phys. Rev. B. vol. 3, pp. 1268-1279, Feb. 1971.
9. L. A. Feldkamp et al.. "Lattice dynamics of cubic Zinc Sulfide by neutron scattering," J. Phys. Chem. Solids, vol. 32, pp. 1573-1583, July 1971.
10. J. M. Ziman, Electrons and Phonons, 2nd ed. Oxford, U.K.: Oxford Univ. Press, 1962.
11. M. V. Fischetti and S. E. Laux, "Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys," Journal of Applied Physics, vol. 80, no. 4, pp. 2234-2252, August 1996.
12. G. Gilat and L. J. Raubenheimer, "Accurate numerical method for calculating frequency distribution functions in solids," Phys. Rev., vol. 144, pp. 390-395, Apr. 1966.
13. L. J. Raubenheimer and G. Gilat, "Accurate numerical method of calculating frequency distribution function in solids-II: Extension to hep crystals," Phys. Rev., vol. 157, pp. 586-599, May 1967.
14. M. V Fischetti, N. Sano, S. E. Laux, and K. Natori, "fullband-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs," in Proc. 1996 Int. Conf. Semiconductor Processes and Devices. Tokyo, Japan, 1996.
15. J. Y. Tang and K. Hess, "Theory of hot electron emission from silicon into silicon dioxide," J. Appl. Phys.. vol. 54, pp. 5145-5151, Sept. 1983.
16. M. V. Fischetti and J. M. Higman, "Theory and calculation of the deformation potential electron-phonon scattering rates in semiconductors," in Monte Carlo Device Simulation: Full Band and Beyond, K. Hess, Ed. Boston, MA: Kluwer, 1991, ch. 5, pp. 123-160.
17. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Equations. Berlin, Germany: Springer-Verlag, 1989.
18. A. Abramo, "A comparison of numerical solutions of the Boltzmann transport equation for high-energy electon transport silicon," IEEE Trans. Electron Devices, vol. 41, pp. 1646-1654, Sept. 1994.
19. J. Bude and R. K. Smith, "Phase-space simplex Monte Carlo for semiconductor transport," Semiconduct. Sci. Technol.. vol. 9, pp. 840-843, 1994.
20. C. Jungemann, S. Keith, M. Bartels, and B. Meinerzhagen, "Efficient fullband Monte Carlo simulation of Silicon devices," IEICE Trans. Electron., vol. E82-C, pp. 870-879, June 1999.
21. K. Kometer, "Lösung der Boltzmann-Gleichung mit der méthode zellulärer automaten," Ph.D. dissertation, Tech. Univ. München, Walter Schottky Inst. Am Coulombwall, Garching, Germany, Feb. 1992.
22. A. Rein, "Zelluläre automaten in der transporttheorie: Konzepte und anwendungen," Ph.D. dissertation, Tech. Univ. München, Walter Schottky Inst. Am Coulombwall, Garching, Germany, June 1995.
23. M. Saraniti and S. M. Goodnick, "A fullband cellular automaton for charge transport simulation in semiconductors," in Proc. 6th Int. Workshop on Computational Electronics, K. Taniguchi, Ed., Osaka, Japan, Oct. 1998.
24. M. Saraniti, S. J. Wigger, and S. M. Goodnick, "fullband cellular automata for modeling transport in sub-micrometer devices," in Proc. 2nd Int. Conf. Modeling and Simulation of Microsystems, MSM99. Puerto Rico , Apr. 1999, pp. 380-383.
25. T. Kunikiyo et al., "A Monte Carlo simulation of anisotropic électron transport in Silicon including fullband structure and anisotropic impactionization model," J. Appl. Phys., vol. 75, pp. 297-312, Jan. 1994.
26. M. Saraniti et ai, "An efficient multigrid Poisson solver for device simulations," IEEE Trans. Computer-Aided Design, vol. 15, pp. 141-150, Feb. 1996.