Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Wong, Man Hoi ^a   Pei, Yi ^a   Palacios, Tomás ^a,b   Shen, Likun ^a   Chakraborty, Arpan ^a,c   McCarthy, Lee S ^a   Keller, Stacia ^a   Denbaars, Steven P ^a   Speck, James S ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

^b USA   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT ANNEALING; CONTACT RESISTIVITY; N-FACE GROWTH;

ANNEALING; CONTACT RESISTANCE; HIGH ELECTRON MOBILITY TRANSISTORS; TWO DIMENSIONAL ELECTRON GAS;

OHMIC CONTACTS;

EID: 36849009082     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2820381     Document Type: Article

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