Impact of strong quantum confinement on the performance of a highly asymmetric device structure: Monte Carlo particle-based simulation of a focused-ion-beam MOSFET

IEEE Transactions on Electron Devices

Volumn 49, Issue 6, 2002, Pages 1019-1026

  Knezevic, Irena ^a,b   Vasileska, Dragica Z ^a,b   Ferry, David K ^a,b  

^a IEEE   (United States)

^b Arizona State University   (United States)

Author keywords

Asymmetric device structures; FIBMOS device; Monte Carlo simulation; Quantization

Indexed keywords

QUANTUM CONFINEMENT;

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; ION BEAMS; ION IMPLANTATION; MONTE CARLO METHODS; MOSFET DEVICES; QUANTUM THEORY; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0036610454     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1003723     Document Type: Article

References (32)

1. A new assymetrical halo source GOLD drain (HS-GOLD) deep sub-half-mictrometer n-MOSFET design for reliability and performance
2. Graded-channel MOSFET (GCMOSFET) for high performance, low voltage DSP applications
3. Lateral straggle of focused-ion-beam implanted Be in GaAs
4. Use of focused-ion-beam and modeling to optimize submicron MOSFET characteristics
5. Optimization of FIBMOS through 2-D device simulations
6. Drive performance of an asymmetric MOSFET structure: The peak device
7. A high performance 0.1 μm MOSFET with asymmetric channel profile
8. Potential design and transport property of 0.1 μm MOSFET with asymmetric channel profile
9. Optimization of FIBMOS through 2D Silvaco Atlas and 2D Monte Carlo particle-based device simulation
10. The onset of quantization in ultra-submicron semiconductor devices
11. Transport and deformation-potential theory for many-valley semiconductors with anisotropic scattering
12. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
13. First-order optical and intervalley scattering in semiconductors
14. 3-D simulations of ultrasmall MOSFET's with real-space treatment of the electron-electron and electron-ion interactions
15. On particle-mesh coupling in Monte Carlo semiconductor device simulation
16. Sur la possibilité de relier les phénomènes d'interference et de diffraction á la théorie des quanta de luminère
17. La structure atomique de la matière et du rayonnement et la Mécanique ondulatoire
18. Quantatheorieinhydrodynamischer form
19. A suggested interpretation of the quantum theory in terms of hidden variables. I
20. A suggested interpretation of the quantum theory in terms of hidden variables. II
21. A quantum potential description of onedimensional time-dependent scattering from square barriers and square wells
22. Utilization of quantum distribution functions for ultra-submicron device transport
23. On the quantum correction for thermodynamic equilibrium
24. Form of the quantum potential for use in hydrodynamic equations for semiconductor device modeling
25. Effective classical partition functions
26. Smooth quantum potential for the hydrodynamic model
27. Smooth QHD model simulation of the resonant tunneling diodes
28. A full-band Monte Carlo model for silicon nanoscale devices with a quantum mechanical correction of the potential
29. An effective potential method for including quantum effects into the simulation of ultra-short and ultra-narrow channel MOSFETs
30. The influence of space quantization effects on the threshold voltage, inversion layer and total gate capacitance in scaled Si-MOSFETs
31. Low-field mobility and quantum effects in asymmetric silicon-based fieldeffects devices