fT and fMAX of 47 and 81 GHz, respectively, on N-polar GaN/AlN MIS-HEMT

IEEE Electron Device Letters

Volumn 30, Issue 6, 2009, Pages 599-601

  Sansaptak, Nidhi D ^a   Pie, Yi ^a   Swenson, Brian L ^a   Brown, David F ^a   Keller, Stacia ^a   Speck, James S ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

Digital doping; GaN spacer; Metal insulatorsemiconductor high electron mobility transistor (MIS HEMT); N polar GaN; Radio frequency (RF) performance

Indexed keywords

ACCESS RESISTANCE; ALLOY SCATTERING; ALN BARRIERS; DIGITAL DOPING; GAN SPACER; GATE-LENGTH; HIGH FREQUENCY PERFORMANCE; LOW-OHMIC CONTACT; MIS-HEMT; N-POLAR GAN; RADIO-FREQUENCY (RF) PERFORMANCE; RESIST PROCESS; SI-DOPING; SMALL SIGNAL; SUBMICROMETER; SURFACE-ROUGHENING;

DIGITAL RADIO; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SWITCHING CIRCUITS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 67649382011     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2020305     Document Type: Article

References (17)

1. x N heterojunction," Appl. Phys. Lett., vol. 63, no. 9, pp. 1214-1215, Aug. 1993.
2. Y.-F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P.M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, "30W/mm GaN HEMTs by field plate optimization," IEEE Electron Device Lett., vol. 25, no. 3, pp. 117-119, Mar. 2004.
3. T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, "AlGaN/GaN high electron mobility transistors with InGaN back-barriers," IEEE Electron Device Lett., vol. 27, no. 1, pp. 13-15, Jan. 2006.
4. M. Micovic, A. Kurdoghlian, P. Hashimoto, M. Hu, M. Antcliffe, P. J. Willadsen, W. S. Wong, R. Bowen, I. Milosavljevic, A. Schmitz, M. Wetzel, and D. H. Chow, "GaN HFET for W-band applications," in IEDM Tech. Dig., San Francisco, CA, 2006, pp. 1-3.
5. M. Sumiya, K. Yoshimura, T. Ito, K. Ohtsuka, S. Fuke, K. Mizuno, M. Yoshimoto, H. Koinuma, A. Ohtomo, and M. Kawasaki, "Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate," J. Appl. Phys., vol. 88, no. 2, pp. 1158-1165, Jul. 2000.
6. M. H. Wong, Y. Pei, T. Palacios, L. Shen, A. Chakraborty, L. S. McCarthy, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Low nonalloyed ohmic contact resistance to nitride high electron mobility transistors using N-face growth," Appl. Phys. Lett., vol. 91, no. 23, p. 232 103, Dec. 2007.
7. S. Rajan, A. Chini, M. H. Wong, J. S. Speck, and U. K. Mishra, "N-polar GaN/AlGaN/GaN high electron mobility transistors," J. Appl. Phys. vol. 102, no. 4, p. 044 501, Aug. 2007.
8. R. Dimitrov, M. Murphy, J. Smart, W. Schaff, J. R. Shealy, L. F. Eastman, O. Ambacher, and M. Stutzmann, "Two-dimensional electron gases in Gaface and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metal-organic chemical vapor deposition on sapphire," J. Appl. Phys., vol. 87, no. 7, pp. 3375-3380, Apr. 2000.
9. E. Monroy, E. Sarigiannidou, F. Fossard, N. Gogneau, E. Belletamalric, J. L. Rouviere, S. Monnoye, H. Mank, and B. Daudin, "Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy," Appl. Phys. Lett., vol. 84, no. 18, pp. 3684-3686, May 2004.
10. S. Keller, N. A. Fichtenbaum, F. Wu, A. Rosales, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition," J. Appl. Phys., vol. 102, no. 8, p. 083 546, Oct. 2007.
11. S. Rajan, M. Wong, Y. Fu, F. Wu, J. S. Speck, and U. K. Mishra, "Growth and electrical characterization of N-face AlGaN/GaN heterostructures," Jpn. J. Appl. Phys., vol. 44, no. 49, pp. L1 478-L1 480, Nov. 2005.
12. S. Keller, C. S. Suh, Z. Chen, R. Chu, M. Furukawa, N. A. Fichtenbaum, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metal-organic chemical vapor deposition," J. Appl. Phys., vol. 103, no. 3, p. 033 708, Feb. 2008.
13. M. H. Wong, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-face high electron mobility transistors with AlN back barrier," IEEE Electron. Device Lett., vol. 29, no. 10, pp. 1101-1104, Oct. 2008.
14. x/GaN interface for N-polar GaN based high electron mobility transistors," J. Appl. Phys., vol. 103, no. 12, p. 124 508, Apr. 2008.
15. A. S. Wakita, C.-Y. Su, H. Rohdin, H.-Y. Liu, A. Lee, J. Seeger, and V. M. Robbins, "Novel high-yield trilayer resist process for 0.1 μm T-gate fabrication," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 13, no. 6, pp. 2725-2728, Dec. 1995.
16. E. Chigaeva, W. Walthes, D. Wiegner, M. Grozing, F. Schaich, N. Wieser, M. Berroth, O. Breitschadel, L. Kley, B. Kuhn, F. Scholz, H. Schweizer, O. Ambacher, and J. Hilsenbeck, "Determination of small-signal parameters of GaN-based HEMTs, in Proc. IEEE Lester Eastman Conf. High Performance Devices, New York, 2000, pp. 115-122.
17. J. M. Golio, Microwave MESFETs & HEMTs. Norwood, MA: Artech House, 1991, pp. 216-232.