The upper limit of the cutoff frequency in ultrashort gate-length InGaAs/ InAlAs HEMTs: A new definition of effective gate length

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 306-308

  Akis, Richard ^a   Ayubi Moak, Jason S ^a   Faralli, Nicolas ^a   Ferry, David K ^a   Goodnick, Stephen M ^a   Saraniti, Marco ^a  

^a Arizona State University   (United States)

Author keywords

Effective gate length; Millimeter wave transistors; Monte Carlo methods; Pseudomorphic high electron mobility transistors (PHEMTs)

Indexed keywords

COMPUTER SIMULATION; CUTOFF FREQUENCY; GATES (TRANSISTOR); MONTE CARLO METHODS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EFFECTIVE GATE LENGTH; MILLIMETER-WAVE TRANSISTORS; PSEUDOMORPHIC HIGH-ELECTRON MOBILITY TRANSISTORS (PHEMTS); ULTRASHORT GATE-LENGTH;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41749122149     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.918391     Document Type: Article

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