An efficient, simple, and precise way to map strain with nanometer resolution in semiconductor devices

Applied Physics Letters

Volumn 96, Issue 9, 2010, Pages

  Koch, Christoph T ^a   Özdöl, V Burak ^a   Van Aken, Peter A ^a  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DARK-FIELD; EXPERIMENTAL REQUIREMENTS; GATE CHANNEL; HIGH PRECISION; HIGH SPATIAL RESOLUTION; IN-LINE ELECTRON HOLOGRAPHY; LARGE FIELD OF VIEWS; MAP STRAIN; METAL OXIDE SEMICONDUCTOR; NANOMETER RESOLUTIONS;

ELECTRON HOLOGRAPHY; FIELD EFFECT TRANSISTORS; SEMICONDUCTOR DEVICE MANUFACTURE;

SEMICONDUCTOR DEVICES;

EID: 77949390606     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3337090     Document Type: Article

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