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Journal of Applied Physics

Volumn 102, Issue 1, 2007, Pages

Characterization of InGaN quantum wells with gross fluctuations in width

(4) Van Der Laak, N K a Oliver, R A a Kappers, M J a Humphreys, C J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; EPILAYERS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE MORPHOLOGY; THREE DIMENSIONAL; TRANSMISSION ELECTRON MICROSCOPY;

DARK FIELD IMAGES; NETWORK STRUCTURE; PSEUDOSUBSTRATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34547143749 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2751401 Document Type: Article

Times cited : (35)

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