Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment

Applied Physics A: Materials Science and Processing

Volumn 94, Issue 2, 2009, Pages 419-422

  Xu, J P ^a   Zou, X ^a,b   Li, C X ^c   Lai, P T ^c   Chan, C L ^c  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b JIANGHAN UNIVERSITY   (China)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; ELECTRIC EQUIPMENT; ELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM;

AND GATES; ELECTRICAL PROPERTIES; EXCELLENT PERFORMANCES; OXIDE CHARGES; REACTIVE COSPUTTERING; STATE DENSITIES; SURFACE PRE TREATMENTS;

MOS CAPACITORS;

EID: 57249094365     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-008-4830-6     Document Type: Article

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