Aluminum nitride-silicon carbide alloy crystals grown on SiC substrates by sublimation

MRS Internet Journal of Nitride Semiconductor Research

Volumn 10, Issue , 2005, Pages 1-8

  Gu, Z ^a   Du, L ^a   Edgar, J H ^a   Payzant, E A ^b   Walker, L ^b   Liu, R ^c   Engelhard, M H ^d  

^a Kansas State University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

^d PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SUBLIMATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GROWTH TEMPERATURE; SIC POWDERS; SUBSTRATE MISORIENTATION;

CRYSTALLINE MATERIALS;

EID: 30544438716     PISSN: 10925783     EISSN: 10925783     Source Type: Journal    
DOI: 10.1557/s1092578300000569     Document Type: Article

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