Aluminum nitride deep-ultraviolet light-emitting p-n junction diodes

Diamond and Related Materials

Volumn 17, Issue 7-10, 2008, Pages 1273-1277

  Taniyasu, Yoshitaka ^a   Kasu, Makoto ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

AlN; Doping; LED; MOVPE

Indexed keywords

ALUMINA; ALUMINUM; ALUMINUM COMPOUNDS; ELECTRON MOBILITY; LIGHT EMISSION; LIGHT METALS; NITRIDES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON; SINGLE CRYSTALS; ULTRAVIOLET RADIATION;

ALN; ALUMINUM NITRIDE; DISLOCATION DENSITIES; DOPING; LED; MOVPE; P-N JUNCTION DIODES; P-N JUNCTIONS; ROOM TEMPERATURES; SI DOPING; ULTRAVIOLET LIGHT-EMITTING;

LIGHT EMITTING DIODES;

EID: 48849085520     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.02.042     Document Type: Article

References (13)

1. Taniyasu Y., Kasu M., and Makimoto T. Nature 441 (2006) 325
2. Khan A. Nature 441 (2006) 299
3. Taniyasu Y., Kasu M., and Kobayashi N. Appl. Phys. Lett. 81 (2002) 1255
4. Taniyasu Y., Kasu M., and Makimoto T. Appl. Phys. Lett. 85 (2004) 4672
5. Taniyasu Y., Kasu M., and Makimoto T. Appl. Phys. Lett. 89 (2006) 182112
6. Taniyasu Y., Kasu M., and Makimoto T. J. Crystal Growth 298 (2007) 310
7. Stampfl C., and Van der Walle C.G. Appl. Phys. Lett. 72 (1998) 459
8. Van de Walle C.G., and Neugebauer J. J. Appl. Phys. 95 (2004) 3851
9. Taniyasu Y., Kasu M., and Kobayashi N. Appl. Phys. Lett. 79 (2001) 4351
10. Nakamura S., Mukai T., Senoh M., and Iwasa N. Jpn. J. Appl. Phys. 31 (1992) L139
11. Taniyasu Y., Kasu M., Kumakura K., Makimoto T., and Kobayashi N. Phys. Status Solidi A 200 (2003) 40
12. Prinz G.M., Ladenburger A., Schirra M., Feneberg M., Thonke K., Sauer R., Taniyasu Y., Kasu M., and Makimoto T. J. Appl. Phys. 101 (2007) 023511
13. Taniyasu Y., Kasu M., and Makimoto T. Appl. Phys. Lett. 90 (2007) 261911