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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 5, 2010, Pages 1169-1174

200-mm-diameter neutral beam source based on inductively coupled plasma etcher and silicon etching

(7) Kubota, Tomohiro a,b Nukaga, Osamu a Ueki, Shinji a Sugiyama, Masakazu a,c Inamoto, Yoshimasa d Ohtake, Hiroto e Samukawa, Seiji a,e

a UNIVERSITY OF TOKYO (Japan)

b INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

c University of Tokyo (Japan)

d Panasonic Factory Solutions Co Ltd (Japan)

e TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APERTURE PLATE; BIAS POWER; EQUIVALENT CURRENT DENSITY; ETCH RATES; FARADAY CUPS; INDUCTIVELY COUPLED PLASMA ETCHER; LARGE-DIAMETER; MASS PRODUCTION; NEUTRAL BEAMS; NEUTRAL PARTICLES; NEUTRALIZATION EFFICIENCY; SILICON ETCHING; SPATIAL UNIFORMITY;

ELECTROMAGNETIC INDUCTION; ETCHING; INDUCTIVELY COUPLED PLASMA; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THERMOCOUPLES;

PARTICLE BEAMS;

EID: 77956419703 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3474977 Document Type: Article

Times cited : (13)

References (28)

1
- 3342930536
- APPLAB 0003-6951,. 10.1063/1.111864
- S. Murakawa, S. Fang, and J. P. McVittie, Appl. Phys. Lett. APPLAB 0003-6951 64, 1558 (1994). 10.1063/1.111864
- (1994) Appl. Phys. Lett. , vol.64 , pp. 1558
- Murakawa, S.¹ Fang, S.² McVittie, J.P.³

2
- 0028529702
- JAPNDE 0021-4922,. 10.1143/JJAP.33.6013
- K. Hashimoto, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 33, 6013 (1994). 10.1143/JJAP.33.6013
- (1994) Jpn. J. Appl. Phys., Part 1 , vol.33 , pp. 6013
- Hashimoto, K.¹

3
- 0035894785
- JAPLD8 0021-4922,. 10.1143/JJAP.40.L1346
- S. Samukawa, Y. Ishikawa, and M. Okigawa, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 40, L1346 (2001). 10.1143/JJAP.40.L1346
- (2001) Jpn. J. Appl. Phys., Part 2 , vol.40 , pp. 1346
- Samukawa, S.¹ Ishikawa, Y.² Okigawa, M.³

4
- 0024753116
- JAPNDE 0021-4922,. 10.1143/JJAP.28.2172
- T. Yunogami, T. Mizutani, K. Suzuki, and S. Nihimatsu, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 28, 2172 (1989). 10.1143/JJAP.28.2172
- (1989) Jpn. J. Appl. Phys., Part 1 , vol.28 , pp. 2172
- Yunogami, T.¹ Mizutani, T.² Suzuki, K.³ Nihimatsu, S.⁴

5
- 0005102674
- JAPNDE 0021-4922,. 10.1143/JJAP.29.2220
- T. Mizutani and T. Yunogami, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 29, 2220 (1990). 10.1143/JJAP.29.2220
- (1990) Jpn. J. Appl. Phys., Part 1 , vol.29 , pp. 2220
- Mizutani, T.¹ Yunogami, T.²

6
- 0028405335
- JAPNDE 0021-4922,. 10.1143/JJAP.33.2200
- T. Tsuchizawa, Y. Jin, and S. Matsuo, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 33, 2200 (1994). 10.1143/JJAP.33.2200
- (1994) Jpn. J. Appl. Phys., Part 1 , vol.33 , pp. 2200
- Tsuchizawa, T.¹ Jin, Y.² Matsuo, S.³

7
- 21844509786
- JVTAD6 0734-2101,. 10.1116/1.579658
- K. P. Giapis, T. A. Moore, and T. K. Minton, J. Vac. Sci. Technol. A JVTAD6 0734-2101 13, 959 (1995). 10.1116/1.579658
- (1995) J. Vac. Sci. Technol. A , vol.13 , pp. 959
- Giapis, K.P.¹ Moore, T.A.² Minton, T.K.³

8
- 0033725630
- JVTBD9 1071-1023,. 10.1116/1.591190
- P. R. Larson, K. A. Copeland, G. Dharmasena, R. A. Lasell, M. Keil, and M. B. Johnson, J. Vac. Sci. Technol. B JVTBD9 1071-1023 18, 307 (2000). 10.1116/1.591190
- (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 307
- Larson, P.R.¹ Copeland, K.A.² Dharmasena, G.³ Lasell, R.A.⁴ Keil, M.⁵ Johnson, M.B.⁶

9
- 0001443883
- APPLAB 0003-6951,. 10.1063/1.119706
- M. J. Goeckner, T. K. Bennett, and S. A. Cohen, Appl. Phys. Lett. APPLAB 0003-6951 71, 980 (1997). 10.1063/1.119706
- (1997) Appl. Phys. Lett. , vol.71 , pp. 980
- Goeckner, M.J.¹ Bennett, T.K.² Cohen, S.A.³

10
- 0035271893
- Anisotropic etching of polymer films by high energy (∼100s of eV) oxygen atom neutral beams
- DOI 10.1116/1.1344909
- S. Panda, D. J. Economou, and L. Chen, J. Vac. Sci. Technol. A JVTAD6 0734-2101 19, 398 (2001). 10.1116/1.1344909 (Pubitemid 32394410)
- (2001) Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films , vol.19 , Issue.2 , pp. 398-404
- Panda, S.¹ Economou, D.J.² Chen, L.³

11
- 70249098103
- JPAPBE 0022-3727,. 10.1088/0022-3727/42/15/155204
- T. H. Min, B. J. Park, S. K. Kang, G. H. Gweon, Y. Y. Kim, and G. Y. Yeom, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 42, 155204 (2009). 10.1088/0022-3727/42/15/155204
- (2009) J. Phys. D: Appl. Phys. , vol.42 , pp. 155204
- Min, T.H.¹ Park, B.J.² Kang, S.K.³ Gweon, G.H.⁴ Kim, Y.Y.⁵ Yeom, G.Y.⁶

12
- 0035878242
- JAPLD8 0021-4922,. 10.1143/JJAP.40.L779
- S. Samukawa, K. Sakamoto, and K. Ichiki, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 40, L779 (2001). 10.1143/JJAP.40.L779
- (2001) Jpn. J. Appl. Phys., Part 2 , vol.40 , pp. 779
- Samukawa, S.¹ Sakamoto, K.² Ichiki, K.³

13
- 0035483288
- JAPLD8 0021-4922,. 10.1143/JJAP.40.L997
- S. Samukawa, K. Sakamoto, and K. Ichiki, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 40, L997 (2001). 10.1143/JJAP.40.L997
- (2001) Jpn. J. Appl. Phys., Part 2 , vol.40 , pp. 997
- Samukawa, S.¹ Sakamoto, K.² Ichiki, K.³

14
- 0036748644
- Generating high-efficiency neutral beams by using negative ions in an inductively coupled plasma source
- DOI 10.1116/1.1494820
- S. Samukawa, K. Sakamoto, and K. Ichiki, J. Vac. Sci. Technol. A JVTAD6 0734-2101 20, 1566 (2002). 10.1116/1.1494820 (Pubitemid 35172412)
- (2002) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.20 , Issue.5 , pp. 1566-1573
- Samukawa, S.¹ Sakamoto, K.² Ichiki, K.³

15
- 4344620023
- JVTAD6 0734-2101,. 10.1116/1.1723338
- S. Noda, H. Nishimori, T. Ida, T. Arikado, K. Ichiki, T. Ozaki, and S. Samukawa, J. Vac. Sci. Technol. A JVTAD6 0734-2101 22, 1506 (2004). 10.1116/1.1723338
- (2004) J. Vac. Sci. Technol. A , vol.22 , pp. 1506
- Noda, S.¹ Nishimori, H.² Ida, T.³ Arikado, T.⁴ Ichiki, K.⁵ Ozaki, T.⁶ Samukawa, S.⁷

16
- 33748980993
- Low-damage atomic layer modification of self-assembled monolayer using neutral beam process
- DOI 10.1063/1.2357001
- Y. Ishikawa, S. Samukawa, and T. Ishida, Appl. Phys. Lett. APPLAB 0003-6951 89, 123122 (2006). 10.1063/1.2357001 (Pubitemid 44439848)
- (2006) Applied Physics Letters , vol.89 , Issue.12 , pp. 123122
- Ishikawa, Y.¹ Samukawa, S.² Ishida, T.³

17
- 0141606747
- JAPLD8 0021-4922,. 10.1143/JJAP.42.L795
- S. Samukawa, Y. Minemura, and S. Fukuda, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 42, L795 (2003). 10.1143/JJAP.42.L795
- (2003) Jpn. J. Appl. Phys., Part 2 , vol.42 , pp. 795
- Samukawa, S.¹ Minemura, Y.² Fukuda, S.³

18
- 33746612899
- Fabrication of FinFETs by damage-free neutral-beam etching technology
- DOI 10.1109/TED.2006.877035
- K. Endo, IEEE Trans. Electron Devices IETDAI 0018-9383 53, 1826 (2006). 10.1109/TED.2006.877035 (Pubitemid 44145088)
- (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.8 , pp. 1826-1833
- Endo, K.¹ Noda, S.² Masahara, M.³ Kubota, T.⁴ Ozaki, T.⁵ Samukawa, S.⁶ Liu, Y.⁷ Ishii, K.⁸ Ishikawa, Y.⁹ Sugimata, E.¹⁰ Matsukawa, T.¹¹ Takashima, H.¹² Yamauchi, H.¹³ Suzuki, E.¹⁴

19
- 38049014889
- JPAPBE 0022-3727,. 10.1088/0022-3727/41/2/024006
- S. Samukawa, Y. Ishikawa, K. Okumura, Y. Sato, K. Tohji, and T. Ishida, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 41, 024006 (2008). 10.1088/0022-3727/ 41/2/024006
- (2008) J. Phys. D: Appl. Phys. , vol.41 , pp. 024006
- Samukawa, S.¹ Ishikawa, Y.² Okumura, K.³ Sato, Y.⁴ Tohji, K.⁵ Ishida, T.⁶

20
- 1642588367
- APPLAB 0003-6951,. 10.1063/1.1655701
- T. Kubota, T. Baba, S. Samukawa, H. Kawashima, Y. Uraoka, T. Fuyuki, and I. Yamashita, Appl. Phys. Lett. APPLAB 0003-6951 84, 1555 (2004). 10.1063/1.1655701
- (2004) Appl. Phys. Lett. , vol.84 , pp. 1555
- Kubota, T.¹ Baba, T.² Samukawa, S.³ Kawashima, H.⁴ Uraoka, Y.⁵ Fuyuki, T.⁶ Yamashita, I.⁷

21
- 77956403202
- JPAPBE 0022-3727,. 10.1088/0022-3727/43/6/065203
- S. Yasuhara, T. Sasaki, T. Shimayama, K. Tajima, H. Yano, S. Kadomura, M. Yoshimaru, N. Matsunaga, and S. Samukawa, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 43, 065203 (2010). 10.1088/0022-3727/43/6/065203
- (2010) J. Phys. D: Appl. Phys. , vol.43 , pp. 065203
- Yasuhara, S.¹ Sasaki, T.² Shimayama, T.³ Tajima, K.⁴ Yano, H.⁵ Kadomura, S.⁶ Yoshimaru, M.⁷ Matsunaga, N.⁸ Samukawa, S.⁹

22
- 31144463291
- Highly anisotropic gate electrode patterning in neutral beam etching using F2 gas chemistry
- DOI 10.1116/1.2050660
- S. Noda, Y. Hoshino, T. Ozaki, and S. Samukawa, J. Vac. Sci. Technol. B JVTBD9 1071-1023 23, 2063 (2005). 10.1116/1.2050660 (Pubitemid 43127177)
- (2005) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.23 , Issue.5 , pp. 2063-2068
- Noda, S.¹ Hoshino, Y.² Ozaki, T.³ Samukawa, S.⁴

23
- 84957281597
- JVTAD6 0734-2101,. 10.1116/1.573923
- D. J. Santeler, J. Vac. Sci. Technol. A JVTAD6 0734-2101 4, 338 (1986). 10.1116/1.573923
- (1986) J. Vac. Sci. Technol. A , vol.4 , pp. 338
- Santeler, D.J.¹

24
- 0030521332
- Pulse-time-modulated electron cyclotron resonance plasma discharge for highly selective, highly anisotropic, and charge-free etching
- DOI 10.1116/1.580170
- S. Samukawa, H. Ohtake, and T. Mieno, J. Vac. Sci. Technol. A JVTAD6 0734-2101 14, 3049 (1996). 10.1116/1.580170 (Pubitemid 126157157)
- (1996) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.14 , Issue.6 , pp. 3049-3058
- Samukawa, S.¹ Ohtake, H.² Mieno, T.³

25
- 21844512635
- New high-power fast atom beam source
- DOI 10.1116/1.579098
- F. Shimokawa and H. Kuwano, J. Vac. Sci. Technol. A JVTAD6 0734-2101 12, 2739 (1994). 10.1116/1.579098 (Pubitemid 24823835)
- (1994) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.12 , Issue.5 , pp. 2739
- Shimokawa, F.¹ Kuwano, H.²

26
- 0032339301
- + impacts onto silicon surfaces: Distributions of reflected energies and angles
- DOI 10.1116/1.580993
- B. A. Helmer and D. B. Graves, J. Vac. Sci. Technol. A JVTAD6 0734-2101 16, 3502 (1998). 10.1116/1.580993 (Pubitemid 128161064)
- (1998) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.16 , Issue.6 , pp. 3502-3514
- Helmer, B.A.¹ Graves, D.B.²

27
- 34547607583
- Cold-cathode Penning discharge-based ionizer for detection of hyperthermal neutral beams
- DOI 10.1063/1.2756628
- S. N. Abolmasov and S. Samukawa, Rev. Sci. Instrum. RSINAK 0034-6748 78, 073302 (2007). 10.1063/1.2756628 (Pubitemid 47192242)
- (2007) Review of Scientific Instruments , vol.78 , Issue.7 , pp. 073302
- Abolmasov, S.N.¹ Samukawa, S.²

28
- 0029224537
- SAAPEB 0924-4247,. 10.1016/0924-4247(94)00852-9
- M. Francou, J. S. Daniel, and L. Peccoud, Sens. Actuators, A SAAPEB 0924-4247 46, 17 (1995). 10.1016/0924-4247(94)00852-9
- (1995) Sens. Actuators, A , vol.46 , pp. 17
- Francou, M.¹ Daniel, J.S.² Peccoud, L.³

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