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Applied Physics A: Materials Science and Processing

Volumn 77, Issue 5, 2003, Pages 711-716

Nickel in silicon studied by electron paramagnetic resonance

(4) Effey Schwickert, B a,b,c Wiegand, M a,b,d Vollmer, H a,b,e Labusch, R a,b,e

a CLAUSTHAL UNIVERSITY OF TECHNOLOGY (Germany)

b UNIVERSITY OF KWAZULU NATAL (South Africa)

c IBM ALMADEN RESEARCH CENTER (United States)

d MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

e Institute of Physics (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); HALL EFFECT; PARAMAGNETIC RESONANCE; SILICON;

VACANCY MODELS;

NICKEL;

EID: 0042971419 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-002-1891-9 Document Type: Article

Times cited : (7)

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