Hydrogen-induced defects in cobalt-doped n-type silicon

Semiconductor Science and Technology

Volumn 11, Issue 1, 1996, Pages 22-26

  Jost, W ^a   Weber, J ^a   Lemke, H ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL POLISHING; COBALT; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ETCHING; HYDROGEN; HYDROGENATION; PLASMA APPLICATIONS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMODYNAMIC STABILITY;

CAPACITANCE VOLTAGE ANALYSIS; COBALT ACCEPTOR CONCENTRATION; HYDROGEN INDUCED DEFECTS; REMOTE PLASMA HYDROGENATION; SCHOTTKY CONTACTS;

SEMICONDUCTING SILICON;

EID: 0029756703     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/1/007     Document Type: Article

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