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Semiconductor Science and Technology

Volumn 11, Issue 4, 1996, Pages 525-530

Hydrogen-cobalt complexes in p-type silicon

(3) Jost, W a Weber, J a Lemke, H b

a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENT MEASUREMENT; ETCHING; HYDROGEN; INDIUM ALLOYS; OHMIC CONTACTS; PLASMA APPLICATIONS; SEMICONDUCTING BORON; SEMICONDUCTING INDIUM COMPOUNDS; VOLTAGE MEASUREMENT;

REMOTE HYDROGEN PLASMA TREATMENT; SCHOTTKY CONTACTS; VOLTAGE CURRENT MEASUREMENT; WET CHEMICAL ETCHING;

SILICON WAFERS;

EID: 0030125703 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/11/4/011 Document Type: Article

Times cited : (33)

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