High-resolution photoinduced transient spectroscopy of electrically active iron-related defects in electron irradiated high-resistivity silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 A, 2003, Pages 5415-5419

  Kaminski, Pawel ^a   Kozlowski, Roman ^a   Jelenski, Andrzej ^a   Mchedlidze, Teimuraz ^b   Suezawa, Masashi ^b  

^a Department of Optical Fiber Technology and and Quantum Systems   (Poland)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Defects in Si; HRPITS; Iron related defects; Irradiation defects

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ATOMS; COMPOSITION EFFECTS; CRYSTAL DEFECTS; ELECTRIC RESISTANCE; ELECTRON IRRADIATION; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRON TRAPS; IRON; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

HIGH RESOLUTION PHOTOINDUCED TRANSIENT SPECTROSCOPY; IRON RELATED DEFECTS; IRRADIATION DEFECTS; VACANCY COMPLEX;

SILICON;

EID: 0344552940     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5415     Document Type: Article

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