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Volumn 5, Issue 2, 2010, Pages 117-120

Advanced step and flash nanoimprint lithography using UV-sensitive hard mask underlayer material

Author keywords

[No Author keywords available]

Indexed keywords

ACRYLATE GROUPS; CONTAMINATION PROBLEM; HARD MASKS; HIGH RESOLUTION; HIGH-ADHESION; LINE EDGE ROUGHNESS; METHACRYLATE GROUPS; NANO-IMPRINT; NEW APPROACHES; POLYMERISATION; RESIDUAL THICKNESS; RESIST MATERIALS; SPIN-ON; UNDERLAYERS; UV IRRADIATION;

EID: 77956247380     PISSN: None     EISSN: 17500443     Source Type: Journal    
DOI: 10.1049/mnl.2010.0014     Document Type: Article
Times cited : (18)

References (10)
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    • Sakai, N.1
  • 2
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    • Fabrication of uniform gratings on composite semiconductors using UV nanoimprint lithography
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    • Ishizuka, S.1    Nakao, M.2    Mashiko, S.3    Mizuno, J.4    Shoji, S.5
  • 3
    • 0042864434 scopus 로고    scopus 로고
    • High aspect pattern fabrication by nano-imprint lithography using fine diamond mold
    • 0021-4922
    • Hirai, Y., Yoshida, S., and Takagi, N.: et al. ' High aspect pattern fabrication by nano-imprint lithography using fine diamond mold ', Jpn. J. Appl. Phys., 2003, 43, p. 3863-3866 0021-4922
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    • Hirai, Y.1    Yoshida, S.2    Takagi, N.3
  • 4
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    • Kehagias, N., Reboud, V., and Chansin, G.: et al. ' Submicron three-dimensional structures fabricated by reverse contact UV nanoimprint lithography ', J. Vac. Sci. Technol., 2006, B24, p. 3002-3005 0022-5355
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    • Kehagias, N.1    Reboud, V.2    Chansin, G.3
  • 5
    • 70349283932 scopus 로고    scopus 로고
    • A decade of step and flash imprint lithography
    • 0914-9244
    • Willson, C.G.: ' A decade of step and flash imprint lithography ', J. Photopolym. Sci. Technol., 2009, 22, p. 147-153 0914-9244
    • (2009) J. Photopolym. Sci. Technol. , vol.22 , pp. 147-153
    • Willson, C.G.1
  • 6
    • 67349186944 scopus 로고    scopus 로고
    • Process control for 32nm imprint masks using variable shape beam pattern generators
    • 0167-9317
    • Thompson, E., Selinidis, K., Maltabes, J.G., Resnick, D.J., and Sreenivasan, S.V.: ' Process control for 32nm imprint masks using variable shape beam pattern generators ', Microelectron. Eng., 2009, 86, p. 709-713 0167-9317
    • (2009) Microelectron. Eng. , vol.86 , pp. 709-713
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  • 7
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    • Correlation between simulation and experiment using UV curable gap fill materials for global planarization
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    • Takei, S., Lin, M.W., and Yoon, S.: et al. ' Correlation between simulation and experiment using UV curable gap fill materials for global planarization ', Int. J. Nanosci., 2009, 8, p. 103-106 0219-581X
    • (2009) Int. J. Nanosci. , vol.8 , pp. 103-106
    • Takei, S.1    Lin, M.W.2    Yoon, S.3
  • 8
    • 53349161254 scopus 로고    scopus 로고
    • Advanced ultraviolet cross-link process and materials for global planarization
    • Takei, S., Horiguchi, Y., and Ohashi, T.: et al. ' Advanced ultraviolet cross-link process and materials for global planarization ', J. Micro/Nanolithogr., MEMS MOEMS, 2008, 7, p. 0430051-0430056
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  • 9
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    • UV cross-link gap fill materials and planarization applications for patterning metal trenches in 32-45nm via first dual damascene process
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    • Takei, S., Shinjo, T., and Horiguchi, Y.: ' UV cross-link gap fill materials and planarization applications for patterning metal trenches in 32-45nm via first dual damascene process ', Jpn. J. Appl. Phys., 2007, 46, p. 4074-4078 0021-4922
    • (2007) Jpn. J. Appl. Phys. , vol.46 , pp. 4074-4078
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  • 10
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    • Gap fill materials using cyclodextrin derivatives in ArF lithography
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    • Takei, S., Shinjo, T., Sakaida, Y., and Hashimoto, K.: ' Gap fill materials using cyclodextrin derivatives in ArF lithography ', Jpn. J. Appl. Phys., 2007, 46, p. 7273-7278 0021-4922
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    • Takei, S.1    Shinjo, T.2    Sakaida, Y.3    Hashimoto, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.