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Volumn 7, Issue 4, 2008, Pages

Advanced ultraviolet cross-link process and materials for global planarization

Author keywords

Clean track; Double patterning process; Imprint; Lithography; Planarization; Ultraviolet cross link materials; XUV ; coater

Indexed keywords

CHEMICAL MECHANICAL POLISHING; LITHOGRAPHY; NANOTECHNOLOGY;

EID: 53349161254     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.2990739     Document Type: Article
Times cited : (17)

References (9)
  • 1
    • 35148890359 scopus 로고    scopus 로고
    • Novel approach of UV cross-link process to planarization for 32-45 nm advanced lithography
    • S. Takei, Y. Horiguchi, T. Shinjo, Y. Mano, M. Muramatsu, M. Iwashita, and K. Tsuchiya, "Novel approach of UV cross-link process to planarization for 32-45 nm advanced lithography," Proc. SPIE 6519, 651933 (2007).
    • (2007) Proc. SPIE , vol.6519 , pp. 651933
    • Takei, S.1    Horiguchi, Y.2    Shinjo, T.3    Mano, Y.4    Muramatsu, M.5    Iwashita, M.6    Tsuchiya, K.7
  • 2
    • 35148827445 scopus 로고    scopus 로고
    • Effect of molecular weight and thermal cross-link rate on via filling performance in BARC and gap fill materials
    • S. Takei, Y. Sakaida, and T. Shinjo, "Effect of molecular weight and thermal cross-link rate on via filling performance in BARC and gap fill materials," Proc. SPIE 6519. 65192V (2007).
    • (2007) Proc. SPIE , vol.6519
    • Takei, S.1    Sakaida, Y.2    Shinjo, T.3
  • 3
    • 33745627516 scopus 로고    scopus 로고
    • New advanced BARC and gap fill materials based on sublimate reduction for 193 nm lithography
    • S. Takei, T. Shinjo, Y. Sakaida, Y. Horiguchi, and Y. Nakajima, "New advanced BARC and gap fill materials based on sublimate reduction for 193 nm lithography," Proc. SPIE 6153, 61532Q (2006).
    • (2006) Proc. SPIE , vol.6153
    • Takei, S.1    Shinjo, T.2    Sakaida, Y.3    Horiguchi, Y.4    Nakajima, Y.5
  • 4
    • 35148899665 scopus 로고    scopus 로고
    • Wet recess gap-fill materials for an advanced dual-damascene process
    • T. Shinjo, S. Takei, Y. Horiguchi, and Y. Nakajima, "Wet recess gap-fill materials for an advanced dual-damascene process," Proc. SPIE 6519, 651930 (2007).
    • (2007) Proc. SPIE , vol.6519 , pp. 651930
    • Shinjo, T.1    Takei, S.2    Horiguchi, Y.3    Nakajima, Y.4
  • 5
    • 3843073043 scopus 로고    scopus 로고
    • Developer-soluble gap fill materials for patterning metal trenches in via-first dual damascene process
    • M. Bhave, K. Edwards, C. Washburn, S. Takei, Y. Sakaida, and Y. Nakajima, "Developer-soluble gap fill materials for patterning metal trenches in via-first dual damascene process," Proc. SPIE 5376, 640-647 (2004).
    • (2004) Proc. SPIE , vol.5376 , pp. 640-647
    • Bhave, M.1    Edwards, K.2    Washburn, C.3    Takei, S.4    Sakaida, Y.5    Nakajima, Y.6
  • 7
    • 34648862054 scopus 로고    scopus 로고
    • A litho-only approach to double patterning
    • A. Vanleenhove and D. Van Steenwinckel, "A litho-only approach to double patterning," Proc. SPIE 6520, 65202F (2007).
    • (2007) Proc. SPIE , vol.6520
    • Vanleenhove, A.1    Van Steenwinckel, D.2
  • 8
    • 0038380867 scopus 로고    scopus 로고
    • A dual BARC method for lithography and etch for dual damascene with low-k
    • M. Mukherjee-roy, V. Bliznetsov, and G. Samudra, "A dual BARC method for lithography and etch for dual damascene with low-k," Jpn. J. Appl. Phys., Part I 42, 2649-2653 (2003).
    • (2003) Jpn. J. Appl. Phys., Part I , vol.42 , pp. 2649-2653
    • Mukherjee-roy, M.1    Bliznetsov, V.2    Samudra, G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.