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Journal of the Electrochemical Society

Volumn 157, Issue 10, 2010, Pages

InGaZnO4 -based thin film transistors using room-temperature grown Mg2Hf5O12 gate insulator

(6) Kim, Dong Hun a Seo, Hyungtak b Chung, Kwun Bum c Cho, Nam Gyu a Kim, Ho Gi a Kim, Il Doo d

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b UNIVERSITY OF CALIFORNIA (United States)

c Dankook University (South Korea)

d Korea Institute of Science and Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; CURRENT CHARACTERISTIC; CURRENT PROPERTIES; DEFECT STATE; FERMI ENERGY LEVELS; GATE INSULATOR; HIGH DIELECTRIC CONSTANTS; HIGH FIELD EFFECT MOBILITY; LOW VOLTAGES; MANIPULATION METHODS; NEW HIGH; ON/OFF RATIO; P-TYPE; PLASTIC SUBSTRATES; POLYCRYSTALLINE; RADIO-FREQUENCY-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SUBTHRESHOLD SWING;

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; SPECTROSCOPIC ANALYSIS; THIN FILMS; VAPOR DEPOSITION;

THIN FILM TRANSISTORS;

EID: 77956212266 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3465656 Document Type: Article

Times cited : (4)

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