Slow trap charging and detrapping in the negative bias temperature instability in HfSiON dielectric based field effect transistors

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Devine, R A B ^a   Alshareef, H N ^b   Quevedo Lopez, M A ^b  

^a NEW MEXICO INSTITUTE OF MINING AND TECHNOLOGY   (United States)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; NEGATIVE TEMPERATURE COEFFICIENT; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; TRANSISTORS;

CHANNEL TRANSISTORS; DETRAPPING; HFSION DIELECTRICS; HFSION GATE DIELECTRICS; MOBILITY VARIATIONS; NEGATIVE BIAS TEMPERATURE INSTABILITIES; POSITIVE CHARGES; TRANSISTOR CHARACTERISTICS; TRAP CHARGING; TRAPPED CHARGES;

FIELD EFFECT TRANSISTORS;

EID: 58149232307     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3039997     Document Type: Article

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