Effects of thermal annealing on charge density and N chemical states in HfSiON films

Applied Physics Letters

Volumn 94, Issue 8, 2009, Pages

  Tanimura, T ^a   Kamada, H ^a   Toyoda, S ^a,b   Kumigashira, H ^a,b   Oshima, M ^a,b   Liu, G L ^c   Liu, Z ^c   Ikeda, K ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; HAFNIUM; HAFNIUM COMPOUNDS; OXYGEN; PARTIAL PRESSURE;

CHEMICAL STATE; CORE-LEVEL SPECTRUM; FIXED CHARGES; HFSION FILMS; HIGH OXYGEN PARTIAL PRESSURES; LOW OXYGEN PARTIAL PRESSURES; OXYGEN GAS PRESSURES; PHOTOEMISSION SPECTROSCOPIES; THERMAL-ANNEALING; TIME DEPENDENTS; TRAPPED CHARGES;

ANNEALING;

EID: 61349193728     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3088856     Document Type: Article

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