Performance and reliability improvement of HfSiON gate dielectrics using chlorine plasma treatment

Applied Physics Letters

Volumn 94, Issue 4, 2009, Pages

  Park, Hong Bae ^a   Ju, Byongsun ^a   Kang, Chang Yong ^b   Park, Chanro ^b   Park, Chang Seo ^b   Lee, Byoung Hun ^c   Kim, Tea Wan ^d   Kim, Beom Seok ^d   Choi, Rino ^d  

^a SAMSUNG Electronics   (South Korea)

^b SEMATECH   (United States)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

^d Inha University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON FILMS; CHLORINE; DEPTH PROFILING; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MASS SPECTROMETRY; MOS CAPACITORS; MOSFET DEVICES; PLASMA APPLICATIONS; PLASMAS; SECONDARY ION MASS SPECTROMETRY;

ATOMIC LAYER DEPOSITED; CARBON RESIDUES; DEVICE PERFORMANCE; EQUIVALENT OXIDE THICKNESS; GATE LEAKAGE CURRENT DENSITIES; GATE STACKS; HFSION FILMS; HFSION GATE DIELECTRICS; NEGATIVE-BIAS TEMPERATURE INSTABILITIES; PLASMA TREATMENTS; RELIABILITY CHARACTERISTICS; RELIABILITY IMPROVEMENTS; RESIDUAL CARBONS; SECONDARY ION MASS SPECTROSCOPIES;

GATE DIELECTRICS;

EID: 59349102941     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3078277     Document Type: Article

References (16)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1361065 89, 5243 (2001).
2. Z. Xu, M. Houssa, S. De Gendt, and M. Heyns, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1435411 80, 1975 (2002).
3. S. J. Lee, H. F. Luan, W. P. Bai, C. H. Lee, T. S. Jeon, Y. Senzaki, D. Roberts, and D. L. Kwong, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2000, 31.
4. J. -H. Lee, Y. -S. Kim, H. -S. Jung, J. -H. Lee, N. -I. Lee, H. -K. Kang, J. -H. Ku, H. S. Kang, Y. -K. Kim, K. -H. Cho, and K. -P. Suh, Dig. Tech. Pap.-Symp. VLSI Technol. DTPTEW 0743-1562 2002, 84.
5. S. M. Kim, E. J. Yoon, M. S. Kim, M. Li, C. W. Oh, S. Y. Lee, K. H. Yeo, S. H. Kim, D. U. Choe, S. D. Suk, D. -W. Kim, and D. Park, Journal of Semiconductor Technology and Science. 6, 22 (2006).
6. W. Y. Choi, J. D. Lee, and B. -G. Park, Journal of Semiconductor Technology and Science. 6, 43 (2006).
7. A. S. Oates, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2003, 923.
8. M. S. Akbar, J. C. Lee, N. Moumen, and J. Perterson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2178403 88, 082901 (2006).
9. H. R. Harris, H. Alshareef, H. C. Wen, S. Krishnan, K. Choi, H. Luan, D. Heh, C. S. Park, H. B. Park, M. Hussain, B. S. Ju, P. D. Kirsch, S. C. Song, P. Majhi, B. H. Lee, and R. Jammy, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2006, 633.
10. K. Endo, T. Tatsumi, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 10.1143/JJAP.42.L685 42, L685 (2003).
11. S. Van Elshocht, M. Baklanov, B. Brijs, R. Carter, M. Caymax, L. Carbonell, M. Claes, T. Conard, V. Cosnier, L. Dat́, S. De Gendt, J. Kluth, D. Pique, O. Richard, D. Vanhaeren, G. Vereecke, T. Witters, C. Zhao, and M. Heyns, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.1784822 151, F228 (2004).
12. M. Cho, R. Degraeve, G. Pourtois, A. Delabie, L. -A. Ragnarsson, T. Kauerauf, G. Groeseneken, S. D. Gendt, M. Heyns, and C. S. Hwang, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2007.892024 54, 752 (2007).
13. Y. W. Kim, Y. Roh, J. -B. Yoo, and H. Kim, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2006.08.039 515, 2984 (2007).
14. M. Cho, J. H. Kim, C. S. Hwang, H. -S. Ahn, S. Han, and J. Y. Won, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2735945 90, 182907 (2007).
15. D. R. Lide, CRC Book of Handbook of Chemistry and Physics, 82nd ed. (CRC, Boca Raton, FL, 2001) pp. 5-26.
16. H. -C. Wen, S. C. Song, C. S. Park, C. Burham, G. Bersuker, K. Choi, M. A. Quevedo-Lopez, B. S. Ju, H. N. Alshareef, H. Niimi, H. B. Park, P. S. Lysaght, P. Majhi, B. H. Lee, and R. Jammy, Dig. Tech. Pap.-Symp. VLSI Technol. DTPTEW 0743-1562 2007, 160.