Low-noise microwave performance of 0.1 μm gate AlInN/GaN HEMTs on SiC

IEEE Microwave and Wireless Components Letters

Volumn 20, Issue 8, 2010, Pages 453-455

  Sun, Haifeng ^a   Alt, Andreas R ^a   Benedickter, Hansruedi ^a   Feltin, Eric ^b   Carlin, Jean Franois ^b   Gonschorek, Marcus ^b   Grandjean, Nicolas ^b   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

AlInN GaN; high electron mobility transistors (HEMTs); microwave noise

Indexed keywords

ASSOCIATED GAIN; LOW NOISE; MAXIMUM CURRENT DENSITY; MAXIMUM OSCILLATION FREQUENCY; MICROWAVE APPLICATIONS; MICROWAVE NOISE; MICROWAVE PERFORMANCE; MINIMUM NOISE FIGURE; PEAK CURRENTS; SEMI-INSULATING; SIC SUBSTRATES;

CUTOFF FREQUENCY; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; MICROWAVES; NITRIDES; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77955580275     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2010.2049008     Document Type: Article

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