Cl2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 2755-2758

  Chen, Ching Hui ^a   Keller, Stacia ^a   Haberer, Elaine D ^a   Zhang, Lidong ^a   DenBaars, Steven P ^a   Hu, Evelyn L ^a   Mishra, Umesh K ^a   Wu, Yifeng ^b  

^a University of California at Santa Barbara   (United States)

^b WiTech   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040114969     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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6. S. J. Pearton, J. W. Lee, J. D. Mackenzie, C. R. Abernathy, and R. J. Shul, Appl. Phys. Lett. 67, 2329 (1995).
7. E. D. Haberer, C.-H. Chen, M. Hansen, and E. L. Hu, The 41st Electronic Materials Conference, Santa Barbara, California, 1999.
8. O. Ambacher et al., J. Appl. Phys. 85, 3222 (1999).
9. Y.-F. Wu, B. Keller, C.-H. Chen, S. Keller, and U. K. Mishra, The Third International Conference on Nitride Semiconductors, Montpellier, France, July 1999.