High-voltage single-crystal diamond diodes

IEEE Transactions on Electron Devices

Volumn 51, Issue 5, 2004, Pages 826-828

  Twitchen, D J ^a   Whitehead, A J ^a   Coe, S E ^a   Isberg, J ^b   Hammersberg, J ^b   Wikstrom T ^c   Johansson, E ^a  

^a ELEMENT SIX LTD   (United Kingdom)

^b UPPSALA UNIVERSITY   (Sweden)

^c ABB CORPORATE RESEARCH   (Sweden)

Author keywords

Boron acceptor; Carrier mobility; Diamond; Diode; High voltage; Space charge

Indexed keywords

CARRIER MOBILITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; OHMIC CONTACTS; SEMICONDUCTING BORON; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SUBSTRATES;

ACOUSTIC PHONON SCATTERING; CARRIER TRANSPORT; GOLD SCHOTTKY CONTACT; SINGLE-CRYSTAL DIAMOND DIODE;

SCHOTTKY BARRIER DIODES;

EID: 2442566848     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.826867     Document Type: Article

References (11)

1. C. E. Weitzel, "Wide bandgap semiconductor RF MESFET power densities," in Proc. Inst. Phys. Conf. Ser., ch. 4, 1995, pp. 765-768.
2. J. Isberg, J. Hammersberg, E. Johansson, T. Wikström, D. J. Twitchen, A. J. Whitehead, S. E. Coe, and G. A. Scarsbrook, "High carrier mobility in single-crystal plasma-deposited diamond," Science, vol. 297, pp. 1670-1672, 2002.
3. J. E. Butler, M. W. Geis, K. E. Krohn, J. Lawless Jr, S. Deneault, T. M. Lyszczarz, D. Flechtner, and R. Wright, "Exceptionally high voltage Schottky diamond diodes and low boron doping," Semicond. Sci. Technol., vol. 18, pp. S67-S71, 2003.
4. H. Shiomi, Y. Nishibayashi, N. Toda, and S. Shikata, "Pulse-doped diamond p-channel metal semiconductor field-effect-transistor," IEEE Electron Device Lett., vol. 16, pp. 36-38, Jan. 1995.
5. A. Vescan, I. Daumiller, P. Gluche, W. Ebert, and E. Kohn, "High temperature, high voltage operation of diamond Schottky diode," Diamond Relat. Mater., vol. 7, pp. 581-584, 1998.
6. M.I. Landstrass, M. A. Plano, M. A. Moreno, S. McWilliams, L. S. Pan, D. R Kania, and S. Han, "Device properties of homoepitaxially grown diamond," Diamond Relat. Mater., vol. 2, pp. 1033-1037, 1993.
7. C. A. Klein and R. DeSalvo, "Thresholds for dielectric breakdown in laser-irradiated diamond," Appl. Phys. Lett., vol. 63, no. 14, p. 1895, 1993.
8. N. F. Mott and R. W. Gurney, Electronic Processes in Ionic Crystals. New York: Oxford Univ. Press, 1940.
9. L. S. Pan and D. R. Kania, Eds., Diamond: Electronic Properties and Applications. Norwell, MA: Kluwer, 1995, p. 242.
10. F. Nava et al., "Transport properties of natural diamond used as nuclear particle detector for a wide temperature range," IEEE Trans. Nucl. Sci., vol. NS-26, pp. 308-315, Jan. 1979.
11. J. Isberg, J. Hammersberg, E. Johansson, T. Wikström, A. Whitehead, D. J. Twitchen, and S. Coe, "Long carrier lifetimes in single crystal CVD diamond," Phys. Rev. Lett., submitted for publication.