SCOPUS 정보 검색 플랫폼

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 999-1002

Recent progress of diamond device toward power application

(5) Shikata, Shinichi a Ikeda, Kazuhiro a Kumaresan, Ramanujam a Umezawa, Hitoshi a Tatsumi, Natsuo b

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b SUMITOMO ELECTRIC INDUSTRIES LTD (Japan)

Author keywords

Defect; Diamond; FOM; High temperature; SBD

Indexed keywords

DEFECTS; DIAMONDS; EPITAXIAL GROWTH; SILICON CARBIDE;

GROWTH CONDITIONS; HIGH CURRENT DENSITIES; HIGH TEMPERATURE; HIGH-POWER DEVICES; MATERIAL CANDIDATE; POWER APPLICATIONS; REVERSE LEAKAGE CURRENT; SMALL-SIZE SUBSTRATES;

SUBSTRATES;

EID: 66149179180 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.999 Document Type: Conference Paper

Times cited : (12)

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