Anisotropic dry etching of boron doped single crystal CVD diamond

Carbon

Volumn 43, Issue 9, 2005, Pages 1839-1842

  Enlund, Johannes ^a   Isberg, Jan ^a   Karlsson, Mikael ^a   Nikolajeff, Fredrik ^a   Olsson, Jörgen ^a   Twitchen, Daniel J ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b ELEMENT SIX LTD   (United Kingdom)

Author keywords

Diamond; Doping; Electronic properties; Oxidation; Single crystals

Indexed keywords

ANISOTROPY; BORON; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); DRY ETCHING; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; INDUCTIVELY COUPLED PLASMA; OXIDATION; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS;

ACTIVE SPECIES; BIAS VOLTAGE; ELECTRONIC APPLICATIONS; GAS PRESSURE;

DIAMONDS;

EID: 21144436880     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2005.02.022     Document Type: Article

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