Fabrication of a field plate structure for diamond Schottky barrier diodes

Diamond and Related Materials

Volumn 18, Issue 2-3, 2009, Pages 292-295

  Ikeda, Kazuhiro ^a   Umezawa, Hitoshi ^a   Tatsumi, Natsuo ^a   Ramanujam, Kumaresan ^a   Shikata, Shin ichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Edge termination technique; Field plate structure; Schottky barrier diode

Indexed keywords

DIAMONDS; DIODES; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; MOSFET DEVICES; PASSIVATION; PLATES (STRUCTURAL COMPONENTS); SEMICONDUCTOR DIODES;

BREAKDOWN PROPERTIES; EDGE TERMINATION TECHNIQUE; FIELD CONCENTRATIONS; FIELD OXIDES; FIELD PLATE STRUCTURE; FIELD PLATES; REVERSE BLOCKING VOLTAGES; SCHOTTKY BARRIER DIODE;

SCHOTTKY BARRIER DIODES;

EID: 59649108499     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.10.021     Document Type: Article

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